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GaN Single Crystal Gallium Nitride Wafer SI Type

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GaN Single Crystal Gallium Nitride Wafer SI Type

GaN Single Crystal Gallium Nitride Wafer SI Type
GaN Single Crystal Gallium Nitride Wafer SI Type

Large Image :  GaN Single Crystal Gallium Nitride Wafer SI Type

Product Details:
Place of Origin: Suzhou China
Brand Name: GaNova
Certification: UKAS/ISO9001:2015
Model Number: JDCD01-001-018
Payment & Shipping Terms:
Packaging Details: Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Delivery Time: 3-4 week days
Payment Terms: T/T
Supply Ability: 10000pcs/month

GaN Single Crystal Gallium Nitride Wafer SI Type

Description
Dimensions: 5 X 10mm² Product Name: Free-standing GaN Substrates
Thickness: 350 ±25µm TTV: ≤ 10µm
Dislocation Density: From 1 X 10⁵ To 3 X 10⁶cm⁻² Macro Defect Density: 0cm⁻²
Highlight:

GaN gallium nitride wafer

,

gan semiconductor substrate

,

gallium nitride wafer SI type

5*10.5mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer

 


Overview

Gallium Nitride (GaN) substrate is a high-quality single-crystal substrate. It is made with original HVPE method and wafer processing technology, which has been originally developed for many years. The features are high crystalline, good uniformity, and superior surface quality.

 

 

(20-21)/(20-2-1) face Free-standing GaN Substrates
Item

GaN-FS-SP-U-S

GaN-FS-SP-N-S

GaN-FS-SP-SI-S

 

 

 

 

 

 

 

GaN Single Crystal Gallium Nitride Wafer SI Type 0

 

Remarks:

A circular arc angle (R < 2 mm) is used for distinguishing the front and back surface.

Dimensions 5 x 10 mm2
Thickness 350 ±25 µm
Orientation

(20-21)/(20-2- 1) plane off angle toward A-axis 0 ±0.5°

(20-21)/(20-2- 1) plane off angle toward C-axis - 1 ±0.2°

Conduction Type N-type N-type Semi-Insulating
Resistivity (300K) < 0.1 Ω·cm < 0.05 Ω·cm > 106 Ω·cm
TTV ≤ 10 µm
BOW - 10 µm ≤ BOW ≤ 10 µm
Front Surface Roughness

< 0.2 nm (polished);

or < 0.3 nm (polished and surface treatment for epitaxy)

Back Surface Roughness

0.5 ~1.5 μm

option: 1~3 nm (fine ground); < 0.2 nm (polished)

Dislocation Density From 1 x 105 to 3 x 106 cm-2
Macro Defect Density 0 cm-2
Useable Area > 90% (edge exclusion)
Package Packaged in a class 100 clean room environment, in 6 PCS container, under a nitrogen atmosphere

 

Appendix: The diagram of miscut angle

GaN Single Crystal Gallium Nitride Wafer SI Type 1

 

If δ1= 0 ±0.5°, then (20-21)/(20-2- 1) plane off angle toward A-Axis is 0 ±0.5°.

If δ2= - 1 ±0.2°, then (20-21)/(20-2- 1) plane off angle toward C-Axis is - 1 ±0.2°.

 

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

 

 

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

Contact Details
Shanghai GaNova Electronic Information Co., Ltd.

Contact Person: Xiwen Bai (Ciel)

Tel: +8613372109561

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