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Ganova and Parent Company Nanowin Jointly Debut at the Artificial Crystal Materials Academic Conference, Successfully Showcasing Product ：2 - 4 inch gallium nitride （GaN） Substrate Date: [September 20-22, 2024] Location: [Hefei, Anhui] Gnova and its parent company Nanowin once again joined hands and ... Read More
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In July 2024, Ganova was honoured to participate in a high-profile Ga2O3 exhibition. In this stage full of opportunities and challenges, we brought our innovative technology, excellent products and full of enthusiasm to communicate and discuss with the elites in the industry, and contributed to the ... Read More
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Our cutting-edge GaN-substrates offer unparalleled performance and durability, making them the perfect choice for all your electronic needs. Upgrade your devices to the next level with our high-quality GaN-substrates and experience faster charging, enhanced power efficiency, and superior reliability... Read More
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The 8th International Third Generation Semiconductor Forum The 19th China International Semiconductor Lighting Forum February 7-10, 2023, Suzhou Booth: A31 The International Third Generation Semiconductor Forum (IFWS) is an annual event of the third-generation semiconductor industry in China, and is ... Read More
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Xinku Liu and his team reported the vertical GaN Schottky barrier diodes (SBDs) on 2” freestanding (FS) GaN wafer from Suzhou Nanowin Science and Technology Co.,Ltd. In the SBDs they developed, using a complementary metal-oxide-semiconductor (CMOS) compatible contact materials, CMOS compatible ... Read More
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