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GaN Epitaxial Wafer

• 2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing
• Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices
• 2 inch Free-standing SI-GaN Substrates
• Gallium Nitride Semiconductor Wafer 325um 375um C Plane

SiC Epitaxial Wafer

• Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um
• 6inch N Type Wafer P MOS Grade 4H SiC Substrate 350.0 ± 25.0um
• 4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um
• P Level SI Type 6inch 4H SiC Semi Insulating Substrate 150mm

GaAs Epi Wafer

• 2inch GaAs Epi Wafer GaAs Undoped Substrates VGF
• S-C-N Conduct 2inch GaAs Undoped Substrates High Electron Mobility
• 2inch GaAs Undoped Substrates GaAs Epi Wafer 0.4E18 To 1E18
• VGF GaAs Undoped Substrates 2inch GaAs Si Dopant

CVD Diamond Substrates

• Electronic Grade CVD Diamond Substrates Dielectric Constant 5.5
• XRD<0.015º Electronic Grade Single Crystal Diamond For Heat Sink
• 3 X 3mm2 CVD Diamond Substrates N Content < 100ppb For Heat Sink
• N Content<100ppb Electronic Grade Single Crystal Wafer For Heat Sink

Rapid Thermal Annealing System

• Boost Production Rapid Thermal Processing RTP-SA-8 Annealing System
• 150mm Rapid Thermal Annealing System With Three Sets Process Gases

Hall Effect Sensor Tester

• Hall Coefficient Hall Effect Sensor Tester Mobility Resistivity Measurement
• Carrier Concentration Hall Effect Sensor Tester Semiconductor Industry
• Semiconductor Materials Hall Effect Sensor Tester Carrier Concentration Measurement

Aluminum Nitride Wafer

• 1'' AlN Aluminum Nitride Wafer 400um S / P / R Grade Chemical Polishing
• 25.4mm 1inch AlN Single Crystal 400um 2H Crystal Form
• 1inch AlN Single Crystal Aluminum Nitride Wafer 450um
• C Plane AIN On Sapphire Wafer Single Or Double Side Polished

Laser Diode Chip

• Threshold Current 0.5A Laser Diode Chip Laser Printing Slope Efficiency 1.0W/A
• 915nm 10W COS Diode Laser Chip On Submount Design
• 915nm Laser Diode Chip Printing Surface Mount Standard Package
• Emitter Size 94um Diode Laser Chip On Submount Design Threshold Current 0.5A

Silicon Carbide Crystal

• Primary Flat Lengh 32.5mm Silicon Carbide Crystal 4" P Grade 100.0mm
• 4H Politype Single Crystal Silicon Carbide 4" P Grade Si Face
• 0.015ohm.cm To 0.028ohm.cm Silicon Carbide Crystal N Type
• 100.0mm Silicon Carbide Crystal 4" P Grade 18.0mm

Ga2O3 Wafer

• FWHM<350arcsec Ga2O3 Wafer Single Crystal Substrate Thickness 0.6mm To 0.8mm
• Single Side Polished Ga2O3 Substrate Single Crystal Thickness 0.6mm 0.8mm
• 10x10mm Ga2O3 Wafer 10x15mm Single Crystal Substrate
• Semiconductor Single Crystal Gallium Oxide Substrate UID Doping

Silicon Wafer

• 0.001-100 ohm-cm Silicon Wafer P Type Boron Dopant
• Discrete Devices Si Substrates P/E P/P E/E G/G Surface Finished
• Prime 2'' Silicon Wafer Standard <10 μm Maximum Capabilities<5um
• Microelectronic 279um Silicon Epitaxial Wafer Primary Substrate

Sapphire Wafer

• 50mm Sapphire Wafer R9 Mirror Polished EPI Ready Wafer Edge R Type
• Thk 430um Sapphire Substrate Crystal Orientation C/M0.2
• A Plane Surface Orientation Sapphire Wafer Mirror Polished EPI Ready
• High Purity Al2O3 50mm Sapphire Substrate Wafer Thk 430μm

Patterned Sapphire Substrates

• Flat Edge Angle 16mm Patterned Sapphire Substrates Front Surface
• Patterned Sapphire Crystal Wafer 2inch Sapphire Substrate
• 50.80mm Patterned Sapphire Substrates 430um A Plane
• Back Laser Making Patterned PSS Sapphire Substrate TTV 5um

Wafer Holder

• 6inch Wafer Holder Cleaning Flower Baskets And Handles

Wafer Dicing Machine

• 0.1mm/s To 600mm/s Wafer Dicing Machine X Axis Cutting Range 260mm
• Silicon Wafer Dicing Machine 260mm Automatic Dicing Saw
• Automatic Wafer Dicing Machine 8 Inch 250mm × 250mm 300mm
• 8 inch Wafer Dicing Machine X Axis Cutting Range 260mm 1.8 KW 2.2 KW