Home Products

SiC Epitaxial Wafer

Best Products

350um 4H SiC substrate

SiC N Type Substrate

6inch SiC Epitaxial Wafer

China SiC Epitaxial Wafer

Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um

Product Name:SiC Epitaxial Wafer

Surface Orientation:Off-Axis:4°toward <11-20>±0.5 °

Polytype:None Permitted
6inch N Type Wafer P MOS Grade 4H SiC Substrate 350.0 ± 25.0um

Product Name:SiC Substrate

Crystal form:4H

Diameter:150.0mm+0mm/-0.2mm
4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

Product Name:SiC Epitaxial Wafer

Crystal Form:4H

Wafer Edge:Beveling
P Level SI Type 6inch 4H SiC Semi Insulating Substrate 150mm

Product Name:Sic Epitaxial Wafer

Crystal form:4H

Diameter:150.0mm+0.0/-0.2mm
4H SiC Epitaxial Wafer P-MOS Grade 150.0 mm +0mm/-0.2mm 47.5 mm ± 1.5 mm

Product Name:SiC Epitaxial Wafer

Diameter:150.0mm +0mm/-0.2mm

Surface Orientation:Off-Axis:4°toward <11-20>±0.5 °
150mm 4H SiC Wafer Semi Insulating Substrate 6inch 350μm

Product Name:Sic Epitaxial Wafer

Crystal form:4H

Diameter:150.0mm+0.0/-0.2mm
150.0mm +0mm/-0.2mm SiC Epitaxial Wafer No Secondary Flat 3mm

Product Name:SiC Epitaxial Wafer

Diameter:150.0mm +0mm/-0.2mm

Surface Orientation:Off-Axis:4°toward <11-20>±0.5 °
N Type 6inch 4H Silicon Carbide Substrate Primary Flat Length 47.5mm

Product Name:Sic Epitaxial Wafer

Crystal form:4H

Diameter:150.0mm+0.0/-0.2mm
47.5 mm ± 1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to<11-20>±1°

Product Name:Sic Epitaxial Wafer

Diameter:150.0mm +0mm/-0.2mm

Surface Orientation:Off-Axis:4°toward <11-20>±0.5 °
6inch 4H SiC Substrate N Type P SBD Grade 350μm

Product Name:Sic Epitaxial Wafer

Crystal form:4H

Diameter:150.0mm +0mm/-0.2mm
4H SiC Epitaxial Wafer 0.015Ω•cm—0.025Ω•Cm ≤4000/cm²150.0 mm +0mm/-0.2mm

Product Name:SiC Epitaxial Wafer

Diameter:150.0mm +0mm/-0.2mm

Surface Orientation:Off-Axis:4°toward <11-20>±0.5 °
P Level 2 Inch SiC Substrate For Power Devices And Microwave Devices

Crystal Form:4H-N/S

Product Name:2inch diameterSilicon Carbide (SiC)Substrate Specification

Diameter:50.8mm±0.38mm

Page 1 of 4|< << 1 2 3 4 >> >|

Browse Categories：

SiC Epitaxial Wafer

350um 4H SiC substrate

SiC N Type Substrate

6inch SiC Epitaxial Wafer

China SiC Epitaxial Wafer

Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um

6inch N Type Wafer P MOS Grade 4H SiC Substrate 350.0 ± 25.0um

4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

P Level SI Type 6inch 4H SiC Semi Insulating Substrate 150mm

4H SiC Epitaxial Wafer P-MOS Grade 150.0 mm +0mm/-0.2mm 47.5 mm ± 1.5 mm

150mm 4H SiC Wafer Semi Insulating Substrate 6inch 350μm

150.0mm +0mm/-0.2mm SiC Epitaxial Wafer No Secondary Flat 3mm

N Type 6inch 4H Silicon Carbide Substrate Primary Flat Length 47.5mm

47.5 mm ± 1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to<11-20>±1°

6inch 4H SiC Substrate N Type P SBD Grade 350μm

4H SiC Epitaxial Wafer 0.015Ω•cm—0.025Ω•Cm ≤4000/cm²150.0 mm +0mm/-0.2mm

P Level 2 Inch SiC Substrate For Power Devices And Microwave Devices

GaN Epitaxial Wafer

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

2 inch Free-standing SI-GaN Substrates

SiC Epitaxial Wafer

Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um

4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP