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Patterned Sapphire Substrates

China Patterned Sapphire Substrates

Flat Edge Angle 16mm Patterned Sapphire Substrates Front Surface

Dimension:50.80±0.10mm

Thickness:430±10μm

Flat edge width:16±1.0mm
Patterned Sapphire Crystal Wafer 2inch Sapphire Substrate

Dimension:50.80±0.10mm

Flat edge angle:A-plane±0.2˚

TTV:≤5μm
50.80mm Patterned Sapphire Substrates 430um A Plane

Flat edge width:16±1.0mm

Flat edge angle:A-plane±0.2˚

TTV:≤5μm
Back Laser Making Patterned PSS Sapphire Substrate TTV 5um

Thickness:430±10μm

Flat edge width:16±1.0mm

TTV:≤5μm
UKAS Patterned Sapphire Substrates Flat Edge Angle

Thickness:430±10μm

Flat edge width:16±1.0mm

TTV:≤5μm
0.8um To 1.2um Patterned Led Sapphire Substrate Round Edge

Dimension:50.80±0.10mm

Thickness:430±10μm

Flat edge angle:A-plane±0.2˚
Back Surface Roughness 0.8um to 1.2um Patterned Sapphire Substrates Width 16mm

Dimension:50.80±0.10mm

Thickness:430±10μm

Flat edge width:16±1.0mm
50.80mm Patterned Polished Sapphire Substrates Thickness 440um

Dimension:50.80±0.10mm

Thickness:430±10μm

Flat edge width:16±1.0mm
A Plane Patterned Sapphire Substrates BOW -8 - 0μm Edge Round

Dimension:50.80±0.10mm

Thickness:430±10μm

Flat edge width:16±1.0mm
Patterned 2inch Sapphire Substrates LED Chip Substrate 50.80mm

Dimension:50.80±0.10mm

Thickness:430±10μm

Flat edge width:16±1.0mm

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GaN Epitaxial Wafer: 2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing; Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices; 2 inch Free-standing SI-GaN Substrates

SiC Epitaxial Wafer: Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um; 4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um; Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP

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