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Silicon Wafer

China Silicon Wafer

0.001-100 ohm-cm Silicon Wafer P Type Boron Dopant

Diameter:2"

Grade:Prime

Growth Method:CZ
Discrete Devices Si Substrates P/E P/P E/E G/G Surface Finished

Growth Method:CZ

Diameter:2"

Grade:Prime
Prime 2'' Silicon Wafer Standard <10 μm Maximum Capabilities<5um

Diameter:2"

Grade:Prime

Growth Method:CZ
Microelectronic 279um Silicon Epitaxial Wafer Primary Substrate

Grade:Prime

Growth Method:CZ

Type/Dopant:P Type/Boron,N Type/Phos,N Type/As, N Type/Sb
N Type Phos Silicon Wafer 3" Thickness 279um 380um 525um 625um

Type/Dopant:P Type/Boron,N Type/Phos,N Type/As, N Type/Sb

Thickness(μm):279

Thickness Tolerance:Standard ± 25μm,Maximum Capabilities ± 5μm
4" 5" 6" Si Wafer P Type / Boron N Type / As N Type / Sb

Diameter:2"

Grade:Prime

Growth Method:CZ
Growth Method CZ Silicon Wafer 5" Orientation <1-0-0>, <1-1-1>, <1-1-0>

Diameter:2"

Grade:Prime

Growth Method:CZ
Semiconductor Devices 2 Inch Silicon Substrate Wafer 8'' 12''

Diameter:2"

Grade:Prime

Growth Method:CZ
N Type Sb N Type As Silicon Wafer 6 Inch 8 Inch

Growth Method:CZ

Orientation:<1-0-0>,<1-1-1>,<1-1-0>

Type/Dopant:P Type/Boron,N Type/Phos,N Type/As, N Type/Sb
CZ Silicon Semiconductor Wafer 380um 525um 625um

Orientation:<1-0-0>,<1-1-1>,<1-1-0>

Thickness(μm):279

Thickness Tolerance:Standard ± 25μm,Maximum Capabilities ± 5μm
12 Inch Silicon Wafer P Type Boron N Type Phos

Diameter:12"

Grade:Prime

Growth Method:CZ
Silicon 8 Inch Wafer Surface Finished P/E P/P E/E G/G

Diameter:8"

Grade:Prime

Growth Method:CZ

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Silicon Wafer

China Silicon Wafer

0.001-100 ohm-cm Silicon Wafer P Type Boron Dopant

Discrete Devices Si Substrates P/E P/P E/E G/G Surface Finished

Prime 2'' Silicon Wafer Standard <10 μm Maximum Capabilities<5um

Microelectronic 279um Silicon Epitaxial Wafer Primary Substrate

N Type Phos Silicon Wafer 3" Thickness 279um 380um 525um 625um

4" 5" 6" Si Wafer P Type / Boron N Type / As N Type / Sb

Growth Method CZ Silicon Wafer 5" Orientation <1-0-0>, <1-1-1>, <1-1-0>

Semiconductor Devices 2 Inch Silicon Substrate Wafer 8'' 12''

N Type Sb N Type As Silicon Wafer 6 Inch 8 Inch

CZ Silicon Semiconductor Wafer 380um 525um 625um

12 Inch Silicon Wafer P Type Boron N Type Phos

Silicon 8 Inch Wafer Surface Finished P/E P/P E/E G/G

GaN Epitaxial Wafer

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

2 inch Free-standing SI-GaN Substrates

SiC Epitaxial Wafer

Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um

4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP