Product Details:
|
Product Name: | SiC Epitaxial Wafer | Surface Orientation: | Off-Axis:4°toward <11-20>±0.5 ° |
---|---|---|---|
Polytype: | None Permitted | Orthogonal Misorientation: | ±5.0° |
Wafer Edge: | Beveling | Primary Flat Length: | 47.5mm ± 1.5mm |
Highlight: | SiC Epitaxial Wafer 150.0 mm,SiC epi wafer 350.0um,Beveling SiC Epitaxial Wafer |
Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0μm± 25.0 μm
JDCD03-001-004
Overview
The 200-mm wafers can be used for a variety of applications. These wafers are 50% thinner than the standard silicon wafer, so the 200-mm diameter can be used for more SiC devices. The 200-mm size is much more efficient and will allow more devices to be built on the same size. A 200-mm-diameter SiC is a very expensive semiconductor, but its high yield makes up for this disadvantage.
Property | P-MOS Grade | P-SBD Grade | D Grade |
Crystal Form | 4H | ||
Polytype | None Permitted | Area≤5% | |
(MPD) a | ≤0.2 /cm2 | ≤0.5 /cm2 | ≤5 /cm2 |
Hex Plates | None Permitted | Area≤5% | |
Hexagonal Polycrystal | None Permitted | ||
Inclusions a | Area≤0.05% | Area≤0.05% | N/A |
Resistivity | 0.015Ω•cm—0.025Ω•cm | 0.015Ω•cm—0.025Ω•cm | 0.014Ω•cm—0.028Ω•cm |
(EPD)a | ≤4000/cm2 | ≤8000/cm2 | N/A |
(TED)a | ≤3000/cm2 | ≤6000/cm2 | N/A |
(BPD)a | ≤1000/cm2 | ≤2000/cm2 | N/A |
(TSD)a | ≤600/cm2 | ≤1000/cm2 | N/A |
Stacking Fault | ≤0.5% Area | ≤1% Area | N/A |
Surface Metal Contamination |
(Al, Cr, Fe, Ni, Cu, Zn, Pb, Na, K, Ti, Ca ,V, Mn) ≤1E11 cm-2 |
||
Diameter | 150.0 mm +0mm/-0.2mm | ||
Surface Orientation | Off-Axis:4°toward <11-20>±0.5 ° | ||
Primary Flat Length | 47.5 mm ± 1.5 mm | ||
Secondary Flat Length | No Secondary Flat | ||
Primary Flat Orientation | Parallel to<11-20>±1° | ||
Secondary Flat Orientation | N/A | ||
Orthogonal Misorientation | ±5.0° | ||
Surface Finish | C-Face:Optical Polish,Si-Face:CMP | ||
Wafer Edge | Beveling | ||
Surface Roughness (10μm×10μm) |
Si Face Ra≤0.20 nm ; C Face Ra≤0.50 nm | ||
Thickness a | 350.0μm± 25.0 μm | ||
LTV(10mm×10mm)a | ≤2μm | ≤3μm | |
(TTV)a | ≤6μm | ≤10μm | |
(BOW) a | ≤15μm | ≤25μm | ≤40μm |
(Warp) a | ≤25μm | ≤40μm | ≤60μm |
Chips/Indents | None Permitted ≥0.5mm Width and Depth | Qty.2 ≤1.0 mm Width and Depth | |
Scratches a (Si Face,CS8520) |
≤5 and Cumulative Length≤0.5×Wafer Diameter |
≤5 and Cumulative Length≤1.5×Wafer Diameter |
|
TUA(2mm*2mm) | ≥98% | ≥95% | N/A |
Cracks | None Permitted | ||
Contamination | None Permitted | ||
Property | P-MOS Grade | P-SBD Grade | D Grade |
Edge Exclusion | 3mm |
Remark: 3mm edge exclusion is used for the items marked with a.
About Us
We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.
FAQ
Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.
Contact Person: Xiwen Bai (Ciel)
Tel: +8613372109561