Product Name:AlN single crystal
Roughness:Al face:≤0.5nm N face(back):≤1.2μm
appearance:Circular belt positioning edge
Appearance:Circular belt positioning edge
Product Name:Aluminum Nitride Wafer
Diameter(mm):25.4±0.5
TUA:≥90%
Polytype:{0001}±0.5°
Product Name:Aluminum Nitride Wafer
Dimensions:φ50.8mm±0.1mm,OF(1-100),Al Face,Locating Edge 16.0± 1.0mm
Substrate:Sapphire(Single or Double Side Polished)
Conduction Type:Semi-Insulating
Dimensions:φ50.8mm±0.1mm,OF(1-100),Al Face,Locating Edge 16.0± 1.0mm
Substrate:Sapphire(Single or Double Side Polished)
Conduction Type:Semi-Insulating
Dimensions:φ50.8mm±0.1mm,OF(1-100),Al Face,Locating Edge 16.0± 1.0mm
Substrate:Sapphire(Single or Double Side Polished)
Conduction Type:Semi-Insulating
Product Name:Aluminum Nitride Wafer
Dimensions:φ50.8mm±0.1mm,OF(1-100),Al Face,Locating Edge 16.0± 1.0mm
Substrate:Sapphire(Single or Double Side Polished)
Product Name:Aluminum Nitride Wafer
Dimensions:φ50.8mm±0.1mm,OF(1-100),Al Face,Locating Edge 16.0± 1.0mm
Substrate:Sapphire(Single or Double Side Polished)
Thickness:[1,2)μm,[2,3)μm,[3,4)μm,[4,5)μm
Orientation:C-plane (0001)±1˚
Conduction Type:Semi-Insulating
Dimensions:φ50.8mm±0.1mm,OF(1-100),Al Face,Locating Edge 16.0± 1.0mm
Substrate:Sapphire(Single or Double Side Polished)
Orientation:C-plane (0001)±1˚
Product Name:Aluminum Nitride Wafer
Diameter:25.4±0.5mm
Thickness:400±50μm
Substrate:Sapphire(Single or Double Side Polished)
Product Name:Aluminum Nitride Wafer
Thickness:[1,2)μm,[2,3)μm,[3,4)μm,[4,5)μm