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GaN Epitaxial Wafer

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GaN Single Crystal Substrate

Un Doped GaN Epitaxial Wafer

C Face GaN Substrate

China GaN Epitaxial Wafer

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

Dimensions:50.8 ± 1 mm

Product Name:Free-standing GaN Substrates

Thickness:350 ±25µm
Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

Dimensions:50.8 ± 1 mm

Thickness:350 ±25µm

BoW:- 10µm ≤ BOW ≤ 10µm
2 inch Free-standing SI-GaN Substrates

Dimensions:50.8 ± 1 mm

Thickness:350 ±25µm

TTV:≤ 10µm
Gallium Nitride Semiconductor Wafer 325um 375um C Plane

Product Name:GaN Single Crystal Substrate

Dimensions:50.8 ± 1 mm

Thickness:350 ±25µm
375 um GaN Epitaxial Wafer Free Standing U-GaN SI-GaN Substrates

Product Name:2-inch Free-standing U-GaN/SI-GaN Substrates

Dimensions:50.8 ± 1mm

Thickness:350 ± 25μm
2 Inch U GaN Substrates SI GaN Substrates 50.8mm

Product Name:2-inch Free-standing U-GaN/SI-GaN Substrates

Dimensions:50.8 ± 1mm

Thickness:350 ± 25μm
Single Crystal GaN Epitaxial Wafer 2inch C Face Un Doped N Type

Product Name:2-inch Free-standing U-GaN/SI-GaN Substrates

Dimensions:50.8 ± 1mm

Thickness:350 ± 25μm
50.8mm Gallium Nitride Semiconductor Wafer 2 Inch Free Standing

Product Name:2-inch Free-standing U-GaN/SI-GaN Substrates

Ga face surface roughness:< 0.2nm (polished) or < 0.3nm (polished and surface treatment for epitaxy)

Orientation flat:(1-100) ± 0.5˚, 16 ± 1mm
Free Standing U / SI GaN Epitaxial Wafer 50.8 mm 350 um

Product Name:2-inch Free-standing U-GaN/SI-GaN Substrates

Dimensions:50.8 ± 1mm

Thickness:350 ± 25μm
SP Face 5 X 10mm2 Gallium Nitride Substrate 350um

Product Name:Free-standing GaN Substrates

Thickness:350 ±25µm

TTV:≤ 10µm
5x10mm2 GaN Epitaxial Wafer Un Doped SI Type

Product Name:Free-Standing GaN Single Crystal Substrate

Thickness:350 ±25µm

TTV:≤ 10µm
GaN Single Crystal Gallium Nitride Wafer SI Type

Dimensions:5 x 10mm²

Product Name:Free-standing GaN Substrates

Thickness:350 ±25µm

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GaN Epitaxial Wafer

GaN Single Crystal Substrate

Un Doped GaN Epitaxial Wafer

C Face GaN Substrate

China GaN Epitaxial Wafer

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

2 inch Free-standing SI-GaN Substrates

Gallium Nitride Semiconductor Wafer 325um 375um C Plane

375 um GaN Epitaxial Wafer Free Standing U-GaN SI-GaN Substrates

2 Inch U GaN Substrates SI GaN Substrates 50.8mm

Single Crystal GaN Epitaxial Wafer 2inch C Face Un Doped N Type

50.8mm Gallium Nitride Semiconductor Wafer 2 Inch Free Standing

Free Standing U / SI GaN Epitaxial Wafer 50.8 mm 350 um

SP Face 5 X 10mm2 Gallium Nitride Substrate 350um

5x10mm2 GaN Epitaxial Wafer Un Doped SI Type

GaN Single Crystal Gallium Nitride Wafer SI Type

GaN Epitaxial Wafer

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

2 inch Free-standing SI-GaN Substrates

SiC Epitaxial Wafer

Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um

4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP