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Sapphire Wafer

China Sapphire Wafer

50mm Sapphire Wafer R9 Mirror Polished EPI Ready Wafer Edge R Type

Diameter:50.8 ±0.10

Surface Orientation:A-Plane(11-20)

Laser mark:As customer required
Thk 430um Sapphire Substrate Crystal Orientation C/M0.2

Surface Orientation:A-Plane(11-20)

Material:High purity Al₂O₃(＞99.995%)

Thickness:430±15μm
A Plane Surface Orientation Sapphire Wafer Mirror Polished EPI Ready

Surface Orientation:A-Plane(11-20)

Material:High purity Al₂O₃(＞99.995%)

Thickness:430 ±15μm
High Purity Al2O3 50mm Sapphire Substrate Wafer Thk 430μm

Surface Orientation:A-Plane(11-20)

Material:High purity Al₂O₃(＞99.995%)

Thickness:430±15μm
A Plane Sapphire Wafer Mirror Polished EPI Ready

Product Name:Sapphire Substrate Wafer

Surface Orientation:A-Plane(11-20)

Material:High purity Al₂O₃(＞99.995%)
EPI Ready Sapphire Substrate Wafer Edge R Type Mirror Polished

Surface Orientation:A-Plane(11-20)

Material:High purity Al2O3(＞99.995%)

Thickness:430 ±10μm
Crystal Orientation C/M0.2 Sapphire Wafer Thk 440μm

Surface Orientation:A-Plane(11-20)

Material:High purity Al₂O₃(＞99.995%)

Thickness:430 ±10μm
A Plane Sapphire Substrate Wafer Thk 440um OF Length (mm) 16 LED Chip

Surface Orientation:A-Plane(11-20)

Product Name:50mm Sapphire Substrate Wafer

Material:High purity Al₂O₃(＞99.995%)
High Purity Al2O3＞99.995% Sapphire Wafer Mirror Polished EPI Ready

Surface Orientation:A-Plane(11-20)

Material:High purity Al₂O₃(＞99.995%)

Thickness:430 ±15μm
Crystal Orientation C/M0.2 50mm Sapphire Substrate Wafer Thk 420um

Surface Orientation:A-Plane(11-20)

Material:High purity Al₂O₃(＞99.995%)

Thickness:430 ±15μm
R Type 50mm Sapphire Wafer Thickness 420μm OF length (mm) 16 LED chip

Product Name:Sapphire Substrate Wafer

Material:High purity Al₂O₃(＞99.995%)

Wafer edge:R-type
Optoelectronics Polishing Sapphire Crystal Wafer R Type

Surface Orientation:A-Plane(11-20)

Material:High purity Al₂O₃(＞99.995%)

Thickness:430 ±15μm

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Sapphire Wafer

China Sapphire Wafer

50mm Sapphire Wafer R9 Mirror Polished EPI Ready Wafer Edge R Type

Thk 430um Sapphire Substrate Crystal Orientation C/M0.2

A Plane Surface Orientation Sapphire Wafer Mirror Polished EPI Ready

High Purity Al2O3 50mm Sapphire Substrate Wafer Thk 430μm

A Plane Sapphire Wafer Mirror Polished EPI Ready

EPI Ready Sapphire Substrate Wafer Edge R Type Mirror Polished

Crystal Orientation C/M0.2 Sapphire Wafer Thk 440μm

A Plane Sapphire Substrate Wafer Thk 440um OF Length (mm) 16 LED Chip

High Purity Al2O3＞99.995% Sapphire Wafer Mirror Polished EPI Ready

Crystal Orientation C/M0.2 50mm Sapphire Substrate Wafer Thk 420um

R Type 50mm Sapphire Wafer Thickness 420μm OF length (mm) 16 LED chip

Optoelectronics Polishing Sapphire Crystal Wafer R Type

GaN Epitaxial Wafer

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

2 inch Free-standing SI-GaN Substrates

SiC Epitaxial Wafer

Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um

4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP