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Rapid Thermal Annealing System

China Rapid Thermal Annealing System

Boost Production Rapid Thermal Processing RTP-SA-8 Annealing System

Maximum product size:8-inch and below wafers

Equipment dimensions:970mm x 1450mm x 2024mm (width x depth x height)

Heating temperature range:Room temperature~~800 ℃ (thermocouple) 800 ℃~1250 ℃ (infrared pyrometer)
150mm Rapid Thermal Annealing System With Three Sets Process Gases

Product Name:Rapid Thermal Annealing System

Model:RTP-150RL

Maximum sample size:150mm

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GaN Epitaxial Wafer: 2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing; Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices; 2 inch Free-standing SI-GaN Substrates

SiC Epitaxial Wafer: Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um; 4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um; Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP

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