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N Content<100ppb Electronic Grade Single Crystal Wafer For Heat Sink

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N Content<100ppb Electronic Grade Single Crystal Wafer For Heat Sink

N Content&lt;100ppb Electronic Grade Single Crystal Wafer For Heat Sink
N Content&lt;100ppb Electronic Grade Single Crystal Wafer For Heat Sink

Large Image :  N Content<100ppb Electronic Grade Single Crystal Wafer For Heat Sink

Product Details:
Brand Name: GaNova
Model Number: JDCD05-001-001
Payment & Shipping Terms:
Packaging Details: Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Delivery Time: 3-4 week days
Payment Terms: T/T
Supply Ability: 5000pcs/month

N Content<100ppb Electronic Grade Single Crystal Wafer For Heat Sink

Description
Density(g/cm3): 3.515 Young’s Modulus(PGa): 1050
Product Name: CVD Diamond Substrates Fracture Toughness(MPa·m1/2): 1~8
Firction Coefficient: 0.1 Thermal Conductivity(300K,Wm·K): 1000~2000
Highlight:

100ppb single crystal wafer

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0.3mm crystal quartz wafer

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Heat Sink single crystal wafer

3*3mm²*0.3mm Electronic Grade Single Crystal Diamond,N Content<100ppb, XRD<0.015º For Heat Sink

 

Overview

Remarkable progress in CVD methods of diamond synthesis has made it possible to prepare diamonds suitable for radiation detection with tailored properties on routine basis. Continuing improvements in CVD methods offer exciting future advancements and large area homo-epitaxial grown single crystal diamond plates/films. There are many applications such as RF diodes, BJT, FET, MEMS and electronic industry due to promising results shown by CVD diamonds. Continued innovation and sustained efforts wold give direction in medical field such as radiotherapy dosimeter.


 

Specification

properties Synthetic diamond  
Density(g/cm3) 3.515 Intrinsic properties
Young’s modulus(PGa) 1050

Mechanical property

Hardness(PGa)

70~120single crystal

60~100 polycrystalline

Breaking strength

2.5-3GPasingle crystal

200-1100MPa polycrystalline

Fracture toughness(MPa·m1/2) 1~8
Firction coefficient 0.1
Thermal conductivity(300K,Wm·K) 1000~2000 Thermal properties
Coefficient of thermal expansion(×10-6/℃) 1(room temperature)
Rerfractive index(590nm) 2.4 Optical properties
Light transmittance 225nm to far infrared
Band gap width(ev) 5.47 Electrical properties
Resistivity(Ω·cm) >1010
Electron mobility(cm2/V·s) 4500
Hole mobility(cm2/V·s) 3800
Dielectric constant 5.5 Dielectric properties
Dielectric losses <2×10-4

 

 

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

 

 

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

 

Contact Details
Shanghai GaNova Electronic Information Co., Ltd.

Contact Person: Xiwen Bai (Ciel)

Tel: +8613372109561

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