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A Plane Sapphire Substrate Wafer Thk 440um OF Length (mm) 16 LED Chip

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A Plane Sapphire Substrate Wafer Thk 440um OF Length (mm) 16 LED Chip

A Plane Sapphire Substrate Wafer Thk 440um OF Length (mm) 16 LED Chip
A Plane Sapphire Substrate Wafer Thk 440um OF Length (mm) 16 LED Chip

Large Image :  A Plane Sapphire Substrate Wafer Thk 440um OF Length (mm) 16 LED Chip

Product Details:
Model Number: JDCD08-001-002
Payment & Shipping Terms:
Packaging Details: Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
Payment Terms: T/T

A Plane Sapphire Substrate Wafer Thk 440um OF Length (mm) 16 LED Chip

Description
Surface Orientation: A-Plane(11-20) Product Name: 50mm Sapphire Substrate Wafer
Material: High Purity Al₂O₃(>99.995%) Thickness: 430±10μm
R-plane: R9 Diameter: 50.8 ±0.10
Highlight:

Sapphire Substrate 440um

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single crystal sapphire 50mm

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A Plane Sapphire Substrate

50mm Sapphire Substrate Wafer Thk 430μm OF Length (Mm) 16 LED Chip

JDCD08-001-001 Diameter 50mm Sapphire substrate wafer , Thk 430μm, crystal orientation C/M0.2, OF length (mm) 16 LED chip,substrate material

The material is grown and orientated, and substrates are fabricated and polished to an extremely smooth damage free Epi-Ready surface on one or both sides of the wafer. A variety of wafer orientations and sizes up to 6" diameter are available.

 

A-Plane sapphire substrates - are usually used for hybrid microelectronic applications requiring a uniform dielectric constant and highly insulating characteristics.

C-Plane substrates - tend to be used for lll-V and ll-Vl compounds, such as GaN, for bright blue and green LED and laser diodes.

R-Plane substrates - these are preferred for the hetero-epitaxial deposition of silicon used in microelectronic IC applications.

 

 

Parameters

Specification
Unit Target Tolerance
Material High purity Al2O3(>99.995%)
Diameter mm 50.8 ±0.10
Thickness μm 430 ±10
Surface Orientation A-Plane(11-20)
-Off Angle toward M-axis degree 0.00 ±0.10
-Off Angle toward A-axis degree 0.00 ±0.10
Flat Orientation C-Plane(0001)
-Flat Off-set Angle degree 0.0 ±0.2
Flat Lenght mm 16.0 ±1
R-plane R9
Front surface Roughness(Ra) nm <0.3
Back surface Roughness μm 0.9~1.2μm
Front surface Quality Mirror Polished,EPI-Ready
Wafer edge R-type
Chamfer amplitude μm 80-160
Included angle radian between flat edge and round edge mm R=9
TTV μm ≤5
LTV(5x5mm) μm ≤1.5
Bow μm 0~-5
Warp μm ≤10
Laser mark   As customer required

 

 

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

 

 

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

 

Contact Details
Shanghai GaNova Electronic Information Co., Ltd.

Contact Person: Xiwen Bai (Ciel)

Tel: +8613372109561

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