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High Purity Al2O3>99.995% Sapphire Wafer Mirror Polished EPI Ready

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High Purity Al2O3>99.995% Sapphire Wafer Mirror Polished EPI Ready

High Purity Al2O3>99.995% Sapphire Wafer Mirror Polished EPI Ready
High Purity Al2O3>99.995% Sapphire Wafer Mirror Polished EPI Ready
High Purity Al2O3>99.995% Sapphire Wafer Mirror Polished EPI Ready High Purity Al2O3>99.995% Sapphire Wafer Mirror Polished EPI Ready

Large Image :  High Purity Al2O3>99.995% Sapphire Wafer Mirror Polished EPI Ready

Product Details:
Model Number: JDCD08-001-001
Payment & Shipping Terms:
Packaging Details: Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
Payment Terms: T/T

High Purity Al2O3>99.995% Sapphire Wafer Mirror Polished EPI Ready

Description
Surface Orientation: A-Plane(11-20) Material: High Purity Al₂O₃(>99.995%)
Thickness: 430 ±15μm R-plane: R9
Diameter: 50.8 ±0.10 Wafer Edge: R-type
Highlight:

Sapphire Wafer EPI Ready

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led sapphire substrate R9

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sapphire wafer A Plane

High purity Al2O3>99.995% Sapphire Substrate Wafer Mirror Polished EPI-Ready

JDCD08-001-001 Diameter 50mm Sapphire substrate wafer , Thk 430μm, crystal orientation C/M0.2, OF length (mm) 16 LED chip,substrate material


Sapphire Substrate Sapphire Substrate makes for superior window material for many IR applications from 3µm to 5µm, for they offer resistant to high temperature, thermal shock, water and sand erosion, small dielectric loss, excellent electrical insulation, with important mechanical and chemical characteristics, and scratching. We have C-Plane R-Plane Sapphire Substrates. C-plane sapphire substrates used for developing III-V and II-VI compounds like GaN for blue LED and laser diodes.

 

Parameters

Specification
Unit Target Tolerance
Material High purity Al2O3(>99.995%)
Diameter mm 50.8 ±0.10
Thickness μm 430 ±15
Surface Orientation C-Plane(0001)
-Off Angle toward M-axis degree 0.20 ±0.10
-Off Angle toward A-axis degree .00 ±0.10
Flat Orientation A-Plane(11-20)
-Flat Off-set Angle degree 0.0 ±0.2
Flat Lenght mm 16.0 ±1
R-plane R9
Front surface Roughness(Ra) nm <0.3
Back surface Roughness μm 0.8~1.2μm
Front surface Quality Mirror Polished,EPI-Ready
Wafer edge R-type
Chamfer amplitude μm 80-160
Included angle radian between flat edge and round edge mm R=9
TTV μm ≤5
LTV(5x5mm) μm ≤1.5
Bow μm 0~-5
Warp μm ≤10
Laser mark   As customer required

 

 

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

 

 

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

 

Contact Details
Shanghai GaNova Electronic Information Co., Ltd.

Contact Person: Xiwen Bai (Ciel)

Tel: +8613372109561

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