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Primary Flat Lengh 32.5mm Silicon Carbide Crystal 4" P Grade 100.0mm

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Primary Flat Lengh 32.5mm Silicon Carbide Crystal 4" P Grade 100.0mm

Primary Flat Lengh 32.5mm Silicon Carbide Crystal 4" P Grade 100.0mm
Primary Flat Lengh 32.5mm Silicon Carbide Crystal 4" P Grade 100.0mm

Large Image :  Primary Flat Lengh 32.5mm Silicon Carbide Crystal 4" P Grade 100.0mm

Product Details:
Model Number: JDZJ01-001-001
Payment & Shipping Terms:
Packaging Details: Packaged in a cleanroom in single seed container
Delivery Time: 3-4 week days

Primary Flat Lengh 32.5mm Silicon Carbide Crystal 4" P Grade 100.0mm

Description
Politype: 4H Diameter: 100.0mm±0.5mm
Carrier Type: N-type Resistivity: 0.015~0.028ohm.cm
Primary Flat Orientation: {10-10}±5.0° Primary Flat Lengh: 32.5mm±2.0mm
Highlight:

32.5mm Silicon Carbide Crystal

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SiC Seed Crystal 100.0mm

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Silicon Carbide Crystal 4"

Primary Flat Lengh 32.5mm±2.0mm SiC Seed Crystal 4" P Grade 100.0mm±0.5mm 0.015~0.028ohm.cm

 

SiC Seed Crystal 4" PGrade

 

SiC can withstand a voltage gradient (or electric field) over eight times greater than than Si or GaAs without undergoing avalanche breakdown. This high breakdown electric field enables the fabrication of very high-voltage, high-power devices such as diodes, power transitors, power thyristors and surge suppressors, as well as high power microwave devices. Additionally, it allows the devices to be placed very close together, providing high device packing density for integrated circuits.

 

6inch SiC ingot specifications
Grade Production Grade Dummy Grade
Politype 4H
Diameter 100.0mm±0.5mm
Carrier Type N-type
Resistivity 0.015~0.028ohm.cm
Orientation 4.0°±0.2°
Primary Flat Orientation {10-10}±5.0°
Primary Flat Lengh 32.5mm±2.0mm
Secondary Flat Orientation Si-face:90°cw.from primary flat±5°
Secondary Flat Length 18.0mm±2.0mm
Edge cracks by high intensity light ≤1mm in radial ≤3mm in radial
Hex Plates by high intensity light Size<1mm,Cumulative area<1% Cumulative area<5%
Polytype Areas by high intensity light None ≤5%area
MicroPipe Density It’s destructive testing. If any disagreement, the samples for supplier retest should be provided by the customer.

It’s destructive testing. If any disagreement, the samples for supplier retest should be provided by the customer.

 

Edge chip ≤1 with maximum length and width 1 mm ≤3 with maximum length and width 3 mm

 

 

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

 

 

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

 

Contact Details
Shanghai GaNova Electronic Information Co., Ltd.

Contact Person: Xiwen Bai (Ciel)

Tel: +8613372109561

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