silicon carbide crystal p grade online manufacture

100.0mm0.5mm SiC Seed Crystal 4" P Grade 4.00.2 Politype 4H SiC Seed Crystal 4" PGrade SiC can withstand a voltage gradient (or electric field) over eight times greater than than Si or GaAs without undergoing ... Read More

4" P Grade SiC Seed Crystal Resistivity 0.015~0.028ohm.Cm 32.5mm2.0mm SiC Seed Crystal 4" PGrade SiC is an excellent thermal conductor. Heat will flow more readily through SiC than other semiconductor materials... Read More

0.015~0.028ohm.Cm SiC Seed Crystal 4" P Grade N-Type Orientation 4.00.2 SiC Seed Crystal 4" PGrade SiC CRYSTAL is an ultra-high purity silicon carbide grain or powder, specially manufactured to achieve ... Read More

JDZJ01-001-001 SiC Seed Crystal 4" P Grade Si-Face 90Cw.From Primary Flat5 SiC Seed Crystal 4" PGrade The physical and electronic properties of SiC make it the foremost semiconductor material for short ... Read More

100.0mm0.5mm SiC Seed Crystal 4" P Grade 0.015~0.028ohm.cm 18.0mm2.0mm SiC Seed Crystal 4" PGrade Electronic devices formed in SiC can operate at extremely high temperatures without suffering from intrinsic ... Read More

Primary Flat Lengh 32.5mm2.0mm SiC Seed Crystal 4" P Grade 100.0mm0.5mm 0.015~0.028ohm.cm SiC Seed Crystal 4" PGrade SiC can withstand a voltage gradient (or electric field) over eight times greater than than ... Read More

4H-N/SI260m25m 2-Inch SiC Substrate P-Level For Power Devices And Microwave Devices JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260m25m for power devices and microwave devices Overview We contribute to ... Read More

6inch 4H-SiC substrate N-Type D Grade 350.025.0m MPD5/cm2 Resistivity 0.014cm0.028cm for power and microwave devices Overview Silicon Carbide (SiC) is a covalent network solid. If we look at its structure, we ... Read More

P-Level 4H-N/SI260um25um 2-Inch SiC Substrate For Power Devices And Microwave Devices JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260m25m for power devices and microwave devices Overview Key features ... Read More

6inch 4H-SiC substrate N-Type P-SBD Grade 350.025.0m MPD0.5/cm2 Resistivity 0.015cm0.025cm for power and microwave devices Overview SiC boules (crystals) are grown, machined into ingots, and then sliced into ... Read More