sic epitaxial wafer c face online manufacture

6inch 4H-SiC Substrate N-Type P-SBD Grade 350.025.0c MPD0.5/cm2 Resistivity 0.015cm0.025cm For Power And Microw 6inch 4H-SiC substrate N-Type Overview SiC boules (crystals) are grown, machined into ingots, and ... Read More

6inch 4H-SiC substrate N-Type P-MOS Grade 350.025.0m MPD0.2/cm2 Resistivity 0.015cm0.025cm for power and microwave devices Overview SiC is used for the fabrication of very high-voltage and high-power devices ... Read More

4H-N/SI260m25m 2-Inch SiC Substrate P-Level For Power Devices And Microwave Devices JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260m25m for power devices and microwave devices Overview We contribute to ... Read More

5 x 10mm2 Free-standing GaN Substrates 350 25 m From 1 x 105 to 3 x 106 cm-2 5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices wafer ... Read More

6inch 4H-SiC substrate N-Type D Grade 350.025.0m MPD5/cm2 Resistivity 0.014cm0.028cm for power and microwave devices Overview Silicon Carbide (SiC) is a covalent network solid. If we look at its structure, we ... Read More

JDCD03-002-001 4inch 4H-SiC substrate P-level SI 500.025.0m MPD0.3/cm2 Resistivity1E9cm for power and microwave devices Overview SiC has higher thermal conductivity than GaAs or Si meaning that SiC devices can ... Read More