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Product Details:
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| Product Name: | SiC Substrate | Crystal Form: | 4H |
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| Diameter: | 150.0mm+0mm/-0.2mm | Surface Orientation: | Off-Axis：4°toward <11-20>±0.5 ° |
| Primary Flat Length: | 47.5mm ± 1.5mm | Secondary Flat Length: | No Secondary Flat |
| Highlight: | 6inch N Type Wafer,4H SiC Substrate,N Type Wafer P MOS Grade |
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6inch 4H-SiC substrate N-Type P-MOS Grade 350.0±25.0μm MPD≤0.2/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm for power and microwave devices
Overview
SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices.
Epitaxial growth is used to produce active layers of silicon carbide (SiC)-based device structures with designed doping density and thickness, because control of doping and thickness in bulk growth is difficult.
The unique electronic and thermal properties of silicon carbide (SiC) make it ideally suited for advanced high-power and high-frequency semiconductor devices that operate well beyond the capabilities of either silicon or gallium arsenide devices.
| Property | P-MOS Grade | P-SBD Grade | D Grade |
| Crystal Form | 4H | ||
| Polytype | None Permitted | Area≤5% | |
| (MPD) a | ≤0.2 /cm2 | ≤0.5 /cm2 | ≤5 /cm2 |
| Hex Plates | None Permitted | Area≤5% | |
| Hexagonal Polycrystal | None Permitted | ||
| Inclusions a | Area≤0.05% | Area≤0.05% | N/A |
| Resistivity | 0.015Ω•cm—0.025Ω•cm | 0.015Ω•cm—0.025Ω•cm | 0.014Ω•cm—0.028Ω•cm |
| (EPD)a | ≤4000/cm2 | ≤8000/cm2 | N/A |
| (TED)a | ≤3000/cm2 | ≤6000/cm2 | N/A |
| (BPD)a | ≤1000/cm2 | ≤2000/cm2 | N/A |
| (TSD)a | ≤600/cm2 | ≤1000/cm2 | N/A |
| Stacking Fault | ≤0.5% Area | ≤1% Area | N/A |
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Surface Metal Contamination |
(Al, Cr, Fe, Ni, Cu, Zn, Pb, Na, K, Ti, Ca ,V, Mn) ≤1E11 cm-2 |
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| Diameter | 150.0 mm +0mm/-0.2mm | ||
| Surface Orientation | Off-Axis:4°toward <11-20>±0.5 ° | ||
| Primary Flat Length | 47.5 mm ± 1.5 mm | ||
| Secondary Flat Length | No Secondary Flat | ||
| Primary Flat Orientation | Parallel to<11-20>±1° | ||
| Secondary Flat Orientation | N/A | ||
| Orthogonal Misorientation | ±5.0° | ||
| Surface Finish | C-Face:Optical Polish,Si-Face:CMP | ||
| Wafer Edge | Beveling | ||
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Surface Roughness (10μm×10μm) |
Si Face Ra≤0.20 nm ； C Face Ra≤0.50 nm | ||
| Thickness a | 350.0μm± 25.0 μm | ||
| LTV(10mm×10mm)a | ≤2μm | ≤3μm | |
| (TTV)a | ≤6μm | ≤10μm | |
| (BOW) a | ≤15μm | ≤25μm | ≤40μm |
| (Warp) a | ≤25μm | ≤40μm | ≤60μm |
| Chips/Indents | None Permitted ≥0.5mm Width and Depth | Qty.2 ≤1.0 mm Width and Depth | |
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Scratches a (Si Face,CS8520) |
≤5 and Cumulative Length≤0.5×Wafer Diameter |
≤5 and Cumulative Length≤1.5×Wafer Diameter |
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| TUA(2mm*2mm) | ≥98% | ≥95% | N/A |
| Cracks | None Permitted | ||
| Contamination | None Permitted | ||
| Property | P-MOS Grade | P-SBD Grade | D Grade |
| Edge Exclusion | 3mm | ||
Remark: 3mm edge exclusion is used for the items marked with a.
About Us
We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.
FAQ
Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.
Contact Person: Xiwen Bai (Ciel)
Tel: +8613372109561
