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Un Doped GaN Epitaxial Wafer

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Un Doped GaN Epitaxial Wafer

Un Doped GaN Epitaxial Wafer
Un Doped GaN Epitaxial Wafer

Large Image :  Un Doped GaN Epitaxial Wafer

Product Details:
Place of Origin: Suzhou China
Brand Name: GaNova
Certification: UKAS/ISO9001:2015
Payment & Shipping Terms:
Packaging Details: Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Delivery Time: 3-4 week days
Payment Terms: T/T
Supply Ability: 10000pcs/month

Un Doped GaN Epitaxial Wafer

Description
Dimensions: 10 X 10.5mm² Thickness: 350 ±25µm
Product Name: GaN Single Crystal Substrate BoW: - 10µm ≤ BOW ≤ 10µm
Macro Defect Density: 0cm⁻² Useable Area: > 90% (edge Exclusion)
Highlight:

Un Doped GaN Epitaxial Wafer

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single crystal n type wafer

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10 x 10.5 mm2 GaN Epitaxial Wafer

10*10.5mm² C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser

 


Overview
Gallium Nitride (GaN) substrate is a high-quality single-crystal substrate. It is made with original HVPE method and wafer processing technology, which has been originally developed for many years. The features are high crystalline, good uniformity, and superior surface quality. GaN substrates are used for LD applications (violet, blue and green).
Furthermore, development has progressed for power and high frequency electronic device application.

 

10 x 10.5 mm2 Free-standing GaN Substrates
Item GaN-FS-C-U-S10 GaN-FS-C-N-S10 GaN-FS-C-SI-S10

Un Doped GaN Epitaxial Wafer 0

Remarks:
A circular arc angle (R < 2 mm) is used for distinguishing the Ga and N face.

Dimensions 10 x 10.5 mm2
Thickness 350 ±25 µm
Orientation C plane (0001) off angle toward M-axis 0.35 ±0.15°
Conduction Type N-type N-type Semi-Insulating
Resistivity(300K) < 0.1 Ω·cm < 0.05 Ω·cm > 106 Ω·cm
TTV ≤ 10 µm
BoW - 10 µm ≤ BOW ≤ 10 µm
Ga Face Surface Roughness < 0.2 nm (polished)
or < 0.3 nm (polished and surface treatment for epitaxy)
N Face Surface Roughness 0.5 ~1.5 μm
option: 1~3 nm (fine ground); < 0.2 nm (polished)
Dislocation Density From 1 x 105 to 3 x 106 cm-2 (calculated by CL)*
Macro Defect Density 0 cm-2
Useable Area > 90% (edge exclusion)
Package Packaged in a class 100 clean room environment, in 6 PCS container, under a nitrogen atmosphere

*National standards of China (GB/T32282-2015)

 

 

Un Doped GaN Epitaxial Wafer 1

 

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

 

 

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

Contact Details
Shanghai GaNova Electronic Information Co., Ltd.

Contact Person: Xiwen Bai (Ciel)

Tel: +8613372109561

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