free standing gan substrates online manufacture

5 X 10 mm2 M Face Free-Standing GaN Substrates 350 25 m TTV 10 m 5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser wafer Overview GaN substrate ... Read More

5*10.5mm2 A Face Free-Standing GaN Substrates Thickness 350 25 m 5*10.5mm2 A-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices wafer Overview Gallium Nitride (GaN) ... Read More

2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices To reduce the Fe trapping carrier and the sheet resistances of the two-dimension electron gas generated ... Read More

5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser wafer Overview Gallium Nitride (GaN) substrate is a high-quality single-crystal substrate. It ... Read More

2-inch Free-standing U-GaN/SI-GaN Substrates 50.8 1 mm 350 25 m 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser wafer Overview GaN Breakdown Field ... Read More

10*10.5mm C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser Overview GaN Substrates GaN (gallium nitride) substrates and wafers with high quality (low ... Read More

2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices The achieved breakdown voltage of the Fe-doped GaN epitaxial layer can be as high as 2457 V, which is ... Read More

2-inch Free-standing U-GaN/SI-GaN Substrates 350 25 m 50.8 1 mm 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser wafer Overview GaN Template on ... Read More

50.8 1 mm 2-inch Free-standing U-GaN/SI-GaN Substrates (1-100) 0.5o, 16 1 mm 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser wafer Overview GaN ... Read More

2-Inch Free-Standing N-GaN Substrates N Face Surface Roughness 0.5 ~1.5 m (Single Side Polished) 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 cm Power device/laser ... Read More