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Product Details:
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| Diameter: | 150.0mm +0mm/-0.2mm | Product Name: | SiC Epitaxial Wafer |
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| Surface Orientation: | Off-Axis:4°toward <11-20>±0.5 ° | Primary Flat Length: | 47.5mm ± 1.5mm |
| Crystal Form: | 4H | Polytype: | None Permitted |
| Highlight: | SiC Epitaxial Wafer UKAS,SiC semiconductor wafer,GaNova SiC Epitaxial Wafer |
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150.0 mm +0mm/-0.2mm Sic Epitaxial Wafer Off-Axis:4°Toward <11-20>±0.5 °
JDCD03-001-004
Overview
A SiC wafer is a semiconductor made of silicon. Its flatness, thermal conductivity, and electrical conductivity make it an ideal carrier for silicon. While the 150mm diameter is still the standard, there are several companies that produce 200mm-diameter SiC. A SIC wafer can be produced in a number of different ways, but the most common size is the one used for power conversion.
The unique electronic and thermal properties of silicon carbide (SiC) make it ideally suited for advanced high-power and high-frequency semiconductor devices that operate well beyond the capabilities of either silicon or gallium arsenide devices.
| Property | P-MOS Grade | P-SBD Grade | D Grade |
| Crystal Form | 4H | ||
| Polytype | None Permitted | Area≤5% | |
| (MPD) a | ≤0.2 /cm2 | ≤0.5 /cm2 | ≤5 /cm2 |
| Hex Plates | None Permitted | Area≤5% | |
| Hexagonal Polycrystal | None Permitted | ||
| Inclusions a | Area≤0.05% | Area≤0.05% | N/A |
| Resistivity | 0.015Ω•cm—0.025Ω•cm | 0.015Ω•cm—0.025Ω•cm | 0.014Ω•cm—0.028Ω•cm |
| (EPD)a | ≤4000/cm2 | ≤8000/cm2 | N/A |
| (TED)a | ≤3000/cm2 | ≤6000/cm2 | N/A |
| (BPD)a | ≤1000/cm2 | ≤2000/cm2 | N/A |
| (TSD)a | ≤600/cm2 | ≤1000/cm2 | N/A |
| Stacking Fault | ≤0.5% Area | ≤1% Area | N/A |
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Surface Metal Contamination |
(Al, Cr, Fe, Ni, Cu, Zn, Pb, Na, K, Ti, Ca ,V, Mn) ≤1E11 cm-2 |
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| Diameter | 150.0 mm +0mm/-0.2mm | ||
| Surface Orientation | Off-Axis:4°toward <11-20>±0.5 ° | ||
| Primary Flat Length | 47.5 mm ± 1.5 mm | ||
| Secondary Flat Length | No Secondary Flat | ||
| Primary Flat Orientation | Parallel to<11-20>±1° | ||
| Secondary Flat Orientation | N/A | ||
| Orthogonal Misorientation | ±5.0° | ||
| Surface Finish | C-Face:Optical Polish,Si-Face:CMP | ||
| Wafer Edge | Beveling | ||
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Surface Roughness (10μm×10μm) |
Si Face Ra≤0.20 nm ； C Face Ra≤0.50 nm | ||
| Thickness a | 350.0μm± 25.0 μm | ||
| LTV(10mm×10mm)a | ≤2μm | ≤3μm | |
| (TTV)a | ≤6μm | ≤10μm | |
| (BOW) a | ≤15μm | ≤25μm | ≤40μm |
| (Warp) a | ≤25μm | ≤40μm | ≤60μm |
| Chips/Indents | None Permitted ≥0.5mm Width and Depth | Qty.2 ≤1.0 mm Width and Depth | |
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Scratches a (Si Face,CS8520) |
≤5 and Cumulative Length≤0.5×Wafer Diameter |
≤5 and Cumulative Length≤1.5×Wafer Diameter |
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| TUA(2mm*2mm) | ≥98% | ≥95% | N/A |
| Cracks | None Permitted | ||
| Contamination | None Permitted | ||
| Property | P-MOS Grade | P-SBD Grade | D Grade |
| Edge Exclusion | 3mm | ||
Remark: 3mm edge exclusion is used for the items marked with a.
About Us
We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.
FAQ
Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.
Contact Person: Xiwen Bai (Ciel)
Tel: +8613372109561
