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JDZJ01-001-002 SiC Ingot Crystal 4" D Grade

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JDZJ01-001-002 SiC Ingot Crystal 4" D Grade

JDZJ01-001-002 SiC Ingot Crystal 4" D Grade
JDZJ01-001-002 SiC Ingot Crystal 4" D Grade

Large Image :  JDZJ01-001-002 SiC Ingot Crystal 4" D Grade

Product Details:
Model Number: JDZJ01-001-002
Payment & Shipping Terms:
Packaging Details: Packaged in a cleanroom in single seed container
Delivery Time: 3-4 week days

JDZJ01-001-002 SiC Ingot Crystal 4" D Grade

Description
Politype: 4H Diameter: 100.0mm±0.5mm
Carrier Type: N-type Resistivity: 0.015~0.028ohm.cm
Orientation: 4.0°±0.2° Primary Flat Orientation: {10-10}±5.0°
Primary Flat Lengh: 32.5mm±2.0mm Secondary Flat Orientation: Si-face:90°cw.from Primary Flat±5°
Highlight:

4” SiC Ingot Crystal

,

D Grade SiC Ingot Crystal

SiC ingot crystal 4" P grade

 

SiC devices can operate at high frequencies (RF and microwave) because of the high saturated electron drift velocity of SiC.

SiC is an excellent thermal conductor. Heat will flow more readily through SiC than other semiconductor materials. In fact, at room temperature, SiC has a higher thermal conductivity than any metal. This property enables SiC devices to operate at extremely high power levels and still dissipate the large amounts of excess heat generated.

 

6inch SiC ingot specifications
Grade Production Grade Dummy Grade
Politype 4H
Diameter 100.0mm±0.5mm
Carrier Type N-type
Resistivity 0.015~0.028ohm.cm
Orientation 4.0°±0.2°
Primary Flat Orientation {10-10}±5.0°
Primary Flat Lengh 32.5mm±2.0mm
Secondary Flat Orientation Si-face:90°cw.from primary flat±5°
Secondary Flat Length 18.0mm±2.0mm
Edge cracks by high intensity light ≤1mm in radial ≤3mm in radial
Hex Plates by high intensity light Size<1mm,Cumulative area<1% Cumulative area<5%
Polytype Areas by high intensity light None ≤5%area
MicroPipe Density It’s destructive testing. If any disagreement, the samples for supplier retest should be provided by the customer.

It’s destructive testing. If any disagreement, the samples for supplier retest should be provided by the customer.

 

Edge chip ≤1 with maximum length and width 1 mm ≤3 with maximum length and width 3 mm

 

 

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

 

 

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

 

Contact Details
Shanghai GaNova Electronic Information Co., Ltd.

Contact Person: Xiwen Bai (Ciel)

Tel: +8613372109561

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