Send Message
Home ProductsSilicon Carbide Crystal

JDZJ01-001-005 SiC Seed Crystal S Grade 6" S Grade φ153±0.5mm

Certification
China Shanghai GaNova Electronic Information Co., Ltd. certification
I'm Online Chat Now

JDZJ01-001-005 SiC Seed Crystal S Grade 6" S Grade φ153±0.5mm

JDZJ01-001-005 SiC Seed Crystal S Grade 6" S Grade φ153±0.5mm
JDZJ01-001-005 SiC Seed Crystal S Grade 6" S Grade φ153±0.5mm

Large Image :  JDZJ01-001-005 SiC Seed Crystal S Grade 6" S Grade φ153±0.5mm

Product Details:
Model Number: JDZJ01-001-005
Payment & Shipping Terms:
Packaging Details: Packaged in a cleanroom in single seed container
Delivery Time: 3-4 week days

JDZJ01-001-005 SiC Seed Crystal S Grade 6" S Grade φ153±0.5mm

Description
Warp(μm): ≤50μm Diameter: 153±0.5mm
Thickness: 500±50mm BoW: ≤50μm
Crystal Orientation: 4°off-axis Toward<11-20>±0.5° Main Positioning Edge Lenght: 18.0±2.0
Highlight:

S Grade SiC Seed Crystal

,

φ153±0.5mm SiC Seed Crystal

,

6” SiC Seed Crystal

SiC seed crystal S grade 6" S grade φ153±0.5mm

 

SiC is an excellent thermal conductor. Heat will flow more readily through SiC than other semiconductor materials. In fact, at room temperature, SiC has a higher thermal conductivity than any metal. This property enables SiC devices to operate at extremely high power levels and still dissipate the large amounts of excess heat generated.

 

Grade S level S level
Seed crystal specifications 6”SiC 6”SiC
Diameter(mm) 153±0.5 155±0.5
Thickness(μm) 500±50 500±50
BoW(μm) ≤50 ≤50
Warp(μm) ≤50 ≤50
Crystal orientation 4°off-axis toward<11-20>±0.5° 4°off-axis toward<11-20>±0.5°
Main positioning edge lenght 18.0±2.0 18.0±2.0
Subposition dege length 8.0±2.0 8.0±2.0
Positioning edge direction

Si face:rotate clockwise along the main positioning side:90°±5°

C face:rotate counterclockwise along the main positioning side:90°±5°

Si face:rotate clockwise along the main positioning side:90°±5°

C face:rotate counterclockwise along the main positioning side:90°±5°

Resistivity 0.01~0.04Ω·cm 0.01~0.04Ω·cm
Surface roughness DSP,C face Ra≤1.0nm DSP,C face Ra≤1.0nm
Single crystal zone diameter(mm) ≥150mm ≥152mm
Microtubule density ≤0.5/cm2 ≤0.5/cm2
Collapse side ≤2mm ≤2mm
Packaging method Single piece packing Single piece packing
Remark:Single crystal zone refers to the area without crack and polytype.

 

 

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

 

 

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

 

Contact Details
Shanghai GaNova Electronic Information Co., Ltd.

Contact Person: Xiwen Bai (Ciel)

Tel: +8613372109561

Send your inquiry directly to us (0 / 3000)