Send Message
  • English
Home ProductsSilicon Carbide Crystal

JDZJ01-001-007 Silicon Carbide Seed Crystal

Certification
China Shanghai GaNova Electronic Information Co., Ltd. certification
I'm Online Chat Now

JDZJ01-001-007 Silicon Carbide Seed Crystal

JDZJ01-001-007 Silicon Carbide Seed Crystal
JDZJ01-001-007 Silicon Carbide Seed Crystal

Large Image :  JDZJ01-001-007 Silicon Carbide Seed Crystal

Product Details:
Model Number: JDZJ01-001-007
Payment & Shipping Terms:
Packaging Details: Packaged in a cleanroom in single seed container
Delivery Time: 3-4 week days

JDZJ01-001-007 Silicon Carbide Seed Crystal

Description
Diameter: 105±0.5mm Carrier Type: 500±50μm
TTV: ≤15μm BoW(μm)/Warp(μm): ≤45
Crystal Orientation: 4°off-axis Toward<11-20>±0.5° Main Positioning Edge Lenght: 32.5±2.0
Subposition Dege Length: 18.0±2.0 Resistivity: 0.01~0.028Ω·cm
Highlight:

Silicon Carbide Seed Crystal

JDZJ01-001-007 Silicon Carbide Seed Crystal

 

Electronic devices formed in SiC can operate at extremely high temperatures without suffering from intrinsic conduction effects becauseof the wide energy bandgap. Also, this property allows SiC to emit and detect short wavelength light which makes the fabrication of bluelight emitting diodes and nearly solar blind UV photodetectors possible.

 

4&6inch SiC Seed crystal
Grade S level S level
Seed crystal specifications 6”SiC 6”SiC
Diameter(mm) 105±0.5 153±0.5
Thickness(μm) 500±50 350±20 or 500±50
TTV(μm) ≤15 ≤15
BoW(μm)/Warp(μm) ≤45 ≤60
Crystal orientation 4°off-axis toward<11-20>±0.5° 4°off-axis toward<11-20>±0.5°
Main positioning edge lenght 32.5±2.0 18.0±2.0
Subposition dege length 18.0±2.0 6.0±2.0
Positioning edge direction

Si face:rotate clockwise along the main positioning side:90°±5°

C face:rotate counterclockwise along the main positioning side:90°±5°

Si face:rotate clockwise along the main positioning side:90°±5°

C face:rotate counterclockwise along the main positioning side:90°±5°

Resistivity 0.01~0.028Ω·cm 0.01~0.028Ω·cm
Surface roughness SSP,C face polishing,Ra≤1.0nm DSP,C face Ra≤1.0nm
Single crystal zone diameter(mm) ≥102mm ≥150mm
Microtubule density ≤1/cm2 ≤1/cm2
Collapse side ≤1mm ≤2mm
Packaging method Single piece packing Single piece packing
Remark:Single crystal zone refers to the area without crack and polytype.

 

 

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

 

 

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

 

Contact Details
Shanghai GaNova Electronic Information Co., Ltd.

Contact Person: Xiwen Bai (Ciel)

Tel: +8613372109561

Send your inquiry directly to us (0 / 3000)