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Product Details:
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| Product Name: | Sic Epitaxial Wafer | Crystal Form: | 4H |
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| Diameter: | 100.0mm+0.0/-0.5mm | Surface Orientation: | Partial Crystal Direction: 4°<11-20> Bias ± 0.5° |
| Length Of Main Reference Edge: | 32.5 Mm ± 2.0 Mm | Length Of Secondary Reference Edge: | 18.0 Mm ± 2.0 Mm |
| Highlight: | 4inch SiC Substrate |
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4inch 4H-SiC substrate D-level N-Type 350.0±25.0μm MPD≤5/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm for power and microwave devices
Overview
High Temperature Devices
Because SiC has a high thermal conductivity, SiC dissipates heat more rapidly than other semiconductor materials. This enables SiC devices to be operated at extremely high power levels and still dissipate the large amounts of excess heat generated from the devices.
High Frequency Power Devices
SiC-based microwave electronics are used for wireless communications and radar.
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4inch 4H-SiC N- Type substrate |
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| Product performance | P level | D level | |
| Crystal form | 4H | ||
| Polytypic | Not allow | Area≤5% | |
| Micropipe Densitya | ≤0.5/cm2 | ≤5/cm2 | |
| Six square empty | Not allow | Area≤5% | |
| Hexagon surface hybrid crystal | Not allow | ||
| wrappage a | Area≤0.05% | N/A | |
| Resistivity | 0.015Ω•cm—0.025Ω•cm |
0.014Ω•cm—0.028Ω•cm
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| fault | ≤0.5% | N/A | |
| Diameter | 100.0mm+0.0/-0.5mm | ||
| Surface orientation | Partial crystal direction: 4°<11-20> bias ± 0.5° | ||
| Length of main reference edge |
32.5 mm ± 2.0 mm
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| Length of secondary reference edge | 18.0 mm ± 2.0 mm | ||
| Main reference plane orientation | parallel<11-20> ± 5.0˚ | ||
| Secondary reference plane orientation | 90 ° clockwise to the main reference plane ˚ ± 5.0 ˚, Si face up | ||
| Orthogonal orientation deviatio |
±5.0°
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| Surface preparation | C-Face: Mirror Polishing, Si-Face: Chemical Mechanical Polishing (CMP) | ||
| The edge of the wafer | angle of chamfer | ||
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Surface roughness(5μm×5μm)
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Si face Ra＜0.2 nm ,Side C, Ra 0.50 nm
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| thickness |
350.0μm± 25.0 μm
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| LTV(10mm×10mm)a |
≤3µm
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≤5µm
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| TTVa |
≤6µm
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≤10µm
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| Bowa |
≤15µm
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≤30µm
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| Warpa |
≤25µm
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≤45µm
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| Broken edge / gap | Collapse edges of a length and a width of 0.5mm are not allowed | ≤2 and each length and width of 1.0mm | |
| scratcha | ≤5,And the total length is≤ 0.5 times the diameter | ≤5 ,And the total length is 1.5 times the diameter | |
| Available area |
≥95%
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N/A
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| flaw | not allow | ||
| pollution | not allow | ||
| Edge removal |
3mm |
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About Us
We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.
FAQ
Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.
Contact Person: Xiwen Bai (Ciel)
Tel: +8613372109561
