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Product Details:
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| Crystal Form: | 4H | Product Name: | 2inch DiameterSilicon Carbide (SiC)Substrate Specification |
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| Diameter: | 50.8mm±0.38mm | Primary Flat Orientation: | {10-10}±5.0° |
| Primary Flat Length: | 47.5mm ± 1.5mm | Secondary Flat Orientation: | Silicon Face Up:90°CW. From Prime Flat±5.0° |
| Micropipe Density: | ≤5cm-² | Thickness A: | 260μm±25μm |
| Highlight: | 2 Inch SiC Substrate,Demanding Power Electronics 2 inch wafer,SiC Substrate 350um |
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P-Level 2-Inch SiC Substrate 4H-N/SI<0001>260μm±25μm For Demanding Power Electronics
JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI<0001>260μm±25μm for power devices and microwave devices
Overview
High crystal quality for demanding power electronics
As transportation, energy and industrial markets evolve, demand for reliable, high performance power electronics continues to grow. To meet the needs for improved semiconductor performance, device manufacturers are looking to wide bandgap semiconductor materials, such as our 4H SiC Prime Grade portfolio of 4H n -type silicon carbide (SiC) wafers.
| 2inch diameterSilicon Carbide (SiC)Substrate Specification | ||
| Grade | Production Grade(P Grade) | |
| Dimeter | 50.8mm±0.38mm | |
| Thickness | 260μm±25μm | |
| Wafer Orientation | On axis: <0001>±0.5° for 4H-N/4H-SI, Off axis: 4.0° toward <1120 > ±0.5° for 4H-N/4H-SI | |
| Micropipe Density | ≤5cm-² | |
| Resistivity | 4H-N | 0.015~0.028Ω·cm |
| 4H-SI | ＞1E5Ω·cm | |
| Primary Flat Orientation | {10-10}±5.0° | |
| Primary Flat Length | 15.9mm±1.7mm | |
| Primary Flat Length | 8.0 mm±1.7 mm | |
| Secondary Flat Orientation | Silicon face up:90°CW. from Prime flat±5.0° | |
| Edge Exclusion | 1mm | |
| TTV/Bow/Warp | ≤15μm/≤25μm/≤25μm | |
| Roughness | Silicon face | CMP Ra≤0.5nm |
| Carbon face | Polish Ra≤1.0nm | |
| Edge Cracks By High Intensity Light | None | |
| Hex Plates By High Intensity Light | Cumulative area≤1% | |
| Polytype Areas By High Intensity Light | None | |
| Silicon Surface Scratches By high Intensity Light | 3 scratches to 1 x wafer diameter cumulative length | |
| Edge Chips High By Intensity Light light | None | |
| Silicon Surface Contamination By High Intensity | None | |
| Packaging | Multi-wafer Cassette or Single Wafer Container | |
Remark: 3mm edge exclusion is used for the items marked with a.
About Us
We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.
FAQ
Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.
Contact Person: Xiwen Bai (Ciel)
Tel: +8613372109561
