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GaN Single Crystal Substrate

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GaN Single Crystal Substrate

GaN Single Crystal Substrate
GaN Single Crystal Substrate

Large Image :  GaN Single Crystal Substrate

Product Details:
Place of Origin: Suzhou China
Brand Name: GaNova
Certification: UKAS/ISO9001:2015
Model Number: JDCD01-001-020
Payment & Shipping Terms:
Packaging Details: Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Delivery Time: 3-4 week days
Payment Terms: T/T
Supply Ability: 10000pcs/month

GaN Single Crystal Substrate

Description
Product Name: 2-inch Free-standing N-GaN Substrates Dimensions: 50.0 ±0.3mm
Thickness: 400 ± 30μm Orientation Flat: (1- 100) ±0.1˚, 12.5 ± 1mm
TTV: ≤ 10µm BoW: ≤ 20μm
Highlight:

GaN Single Crystal Substrate

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gan epi wafer 400um

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UKAS Single Crystal Substrate

2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer

 


Overview
One of the key methods used to fabricate these devices is a light n-type doping of GaN with a low residual impurity concentration of the order of 1015 cm−3 or less. Despite intensive research efforts, the performance of GaN-based power devices has remained insufficient because of an immature epitaxial growth process.

 

2-inch Free-standing N-GaN Substrates
 

 

Production level(P)

 

Research(R)

 

Dummy(D)

 

 

GaN Single Crystal Substrate 0

Note:

(1) 5 points: the miscut angles of 5 positions are 0.55 ±0.15o

(2) 3 points: the miscut angles of positions (2, 4, 5) are 0.55 ±0.15o

(3) Useable area: exclusion of periphery and macro defects (holes)

P+ P P-
Item GaN-FS-C-N-C50-SSP
Dimensions 50.0 ±0.3 mm
Thickness 400 ± 30 μm
Orientation flat (1- 100) ±0.1o, 12.5 ± 1 mm
TTV ≤ 15 μm
BOW ≤ 20 μm
Resistivity (300K) ≤ 0.02 Ω·cm for N-type (Si-doped)
Ga face surface roughness ≤ 0.3 nm (polished and surface treatment for epitaxy)
N face surface roughness 0.5 ~1.5 μm (single side polished)
C plane (0001) off angle toward M-axis(miscut angles)

0.55 ± 0.1o

(5 points)

0.55± 0.15o

(5 points)

0.55 ± 0.15o

(3 points)

Threading dislocation density ≤ 7.5 x 105 cm-2 ≤ 3 x 106 cm-2
Number and max size of holes in Ф47 mm in the center 0 ≤ 3@1000 μm ≤ 12@1500 μm ≤ 20@3000 μm
Useable area > 90% >80% >70%
Package Packaged in a cleanroom in single wafer container

 

 

 

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

 

 

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

Contact Details
Shanghai GaNova Electronic Information Co., Ltd.

Contact Person: Xiwen Bai (Ciel)

Tel: +8613372109561

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