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Product Details:
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| Highlight: | 4 inch sic epitaxial wafer,4 inch sic epi wafer,4 inch sic epi wafers |
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Introduction to GaN on Silicon Green LED Epi wafer
GaN on Silicon Green LED Epi wafer are semiconductor structures formed on silicon substrate materials through epitaxial growth technology for manufacturing green light-emitting diodes (LEDs). It is a key intermediate material in the manufacturing of LED chips, and its structure and performance directly affect the luminous efficiency, wavelength, and other characteristics of the final LED device.
application area
Display technology: In the field of full-color display screens, silicon-based green LED epitaxial wafers are used to manufacture green pixels, which together with red and blue LED pixels form the basic unit of color display. Its excellent wavelength uniformity and high luminous efficiency can achieve high-resolution and high color saturation display screens. For example, in the manufacturing of small pitch LED displays and micro LED displays, silicon-based green LED epitaxial wafers play an important role and can be used for indoor and outdoor high-definition displays, virtual reality (VR)/augmented reality (AR) device displays, and other scenarios.
Lighting field: As an important component of green lighting sources, silicon-based green LED epitaxial wafers can be used to manufacture lighting fixtures with high color rendering. In intelligent lighting systems, by combining with other colored LEDs, color temperature and color adjustment functions can be achieved to meet the lighting needs of different scenarios, such as home lighting, commercial lighting, car lighting, etc.
Optical communication: In visible light communication (VLC) technology of optical communication, green LED can be used as a signal emission source. The high-speed modulation performance and high luminous efficiency of silicon-based green LED epitaxial wafers are conducive to achieving high-speed and efficient visible light communication, and can be applied in indoor high-speed data transmission, vehicle to vehicle communication in intelligent transportation systems, and other scenarios.
Product specifications
| 2-4inch Green-LED GaN on silicon | |||||||||
| Item Si(111) substrates | Al(Ga)N buffer | uGaN | nGaN | MQW(1-3 pairs) | AlGaN | pGaN | Contact layer | ||
| InGaN-QW | GaN-QB | ||||||||
| Dimensions | 2 inch,4 inch | ||||||||
| 520±10nm | |||||||||
| Thickness | 800nm | 1000nm | 3000nm | ~3nm | ~10nm | 35nm | 145nm | 20nm | |
| Composition | Al% | / | / | / | / | / | ~15 | / | / |
| In% | / | / | / | ~25 | / | / | / | / | |
| Doping | [Si] | / | / | 8.0E+18 | / | 2.0E+17 | / | / | / |
| [Mg] | / | / | / | / | / | 1.0E+20 | 3.0E+19 | 2.0E+20 | |
| Substrate Structure | 20nmContact layer/145nmpGaN/35nmAlGaN/~10nmGaN-QB/~3Si(111)substrates | ||||||||
| Package | Packaged in a class 100 clean room environment, in 25PCS container, under a nitrogen atmosphere | ||||||||
About Us
We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.
AQ
Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.
Transporter
Contact Person: Xiwen Bai (Ciel)
Tel: +8613372109561
