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Silicon Wafer

China Silicon Wafer

JDCD06-001-005 6-Inch Silicon Wafer MEMS Devices, Integrated Circuits,Dedicated Substrates For Discrete Devices

Diameter:6"

Grade:Prime

Growth Method:CZ
JDCD06-001-004 5-Inch Silicon Wafer MEMS Devices, Integrated Circuits,Dedicated Substrates For Discrete Devices

Diameter:5"

Grade:Prime

Growth Method:CZ

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GaN Epitaxial Wafer: 2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing; Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices; 2 inch Free-standing SI-GaN Substrates

SiC Epitaxial Wafer: Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um; 4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um; Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP

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