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Silicon Wafer

China Silicon Wafer

Discrete Devices 2 Inch Silicon Wafer Thickness 675um 725um 775um

Diameter:2"

Grade:Prime

Growth Method:CZ
775um 725um 675um 8 Inch Wafer Semiconductor Devices

Diameter:2"

Grade:Prime

Growth Method:CZ
2'' Semiconductor Silicon Wafer Thickness 279μm

Diameter:2"

Orientation:<1-0-0>,<1-1-1>,<1-1-0>

Type/Dopant:P Type/Boron,N Type/Phos,N Type/As, N Type/Sb
MEMS Devices Silicon Substrates Integrated Circuits Dedicated

Diameter:2"

Grade:Prime

Growth Method:CZ
JDCD06-001-003 4-Inch Silicon Wafer MEMS Devices, Integrated Circuits,Dedicated Substrates For Discrete Devices

Diameter:4"

Grade:Prime

Growth Method:CZ
JDCD06-001-002 3-Inch Silicon Wafer MEMS Devices, Integrated Circuits,Dedicated Substrates For Discrete Devices

Diameter:3"

Grade:Prime

Growth Method:CZ
JDCD07-001-003 6-Inch SOI Epitaxial Wafer For MEMS Processing

Orientation:<100>,<111>

Type/Dopant:P Type/Boron , N Type/Phos, N Type/As, N Type/Sb

Thickness(μm):300-725
JDCD07-001-004 7-Inch SOI Epitaxial Wafer For MEMS Processing

Diameter:7"

Orientation:<100>,<111>

Type/Dopant:P Type/Boron , N Type/Phos, N Type/As, N Type/Sb
JDCD07-001-002 5-Inch SOI Epitaxial Wafer For MEMS Processing

Orientation:<100>,<111>

Type/Dopant:P Type/Boron , N Type/Phos, N Type/As, N Type/Sb

The Uniformity:<5%
JDCD07-001-001 4-Inch SOI Epitaxial Wafer For MEMS Processing

Diameter:4"

Orientation:<100>,<111>

Type/Dopant:P Type/Boron , N Type/Phos, N Type/As, N Type/Sb
JDCD06-001-007 12-Inch Silicon Wafer MEMS Devices, Integrated Circuits,Dedicated Substrates For Discrete Devices

Diameter:12"

Grade:Prime

Growth Method:CZ
JDCD06-001-006 8-Inch Silicon Wafer MEMS Devices, Integrated Circuits,Dedicated Substrates For Discrete Devices

Diameter:8"

Grade:Prime

Growth Method:CZ

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Silicon Wafer

China Silicon Wafer

Discrete Devices 2 Inch Silicon Wafer Thickness 675um 725um 775um

775um 725um 675um 8 Inch Wafer Semiconductor Devices

2'' Semiconductor Silicon Wafer Thickness 279μm

MEMS Devices Silicon Substrates Integrated Circuits Dedicated

JDCD06-001-003 4-Inch Silicon Wafer MEMS Devices, Integrated Circuits,Dedicated Substrates For Discrete Devices

JDCD06-001-002 3-Inch Silicon Wafer MEMS Devices, Integrated Circuits,Dedicated Substrates For Discrete Devices

JDCD07-001-003 6-Inch SOI Epitaxial Wafer For MEMS Processing

JDCD07-001-004 7-Inch SOI Epitaxial Wafer For MEMS Processing

JDCD07-001-002 5-Inch SOI Epitaxial Wafer For MEMS Processing

JDCD07-001-001 4-Inch SOI Epitaxial Wafer For MEMS Processing

JDCD06-001-007 12-Inch Silicon Wafer MEMS Devices, Integrated Circuits,Dedicated Substrates For Discrete Devices

JDCD06-001-006 8-Inch Silicon Wafer MEMS Devices, Integrated Circuits,Dedicated Substrates For Discrete Devices

GaN Epitaxial Wafer

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

2 inch Free-standing SI-GaN Substrates

SiC Epitaxial Wafer

Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um

4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP