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25.4mm 1inch AlN Single Crystal 400um 2H Crystal Form

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25.4mm 1inch AlN Single Crystal 400um 2H Crystal Form

25.4mm 1inch AlN Single Crystal 400um 2H Crystal Form
25.4mm 1inch AlN Single Crystal 400um 2H Crystal Form

Large Image :  25.4mm 1inch AlN Single Crystal 400um 2H Crystal Form

Product Details:
Place of Origin: Suzhou China
Brand Name: GaNova
Certification: UKAS/ISO9001:2015
Model Number: JDCD02-001-002
Payment & Shipping Terms:
Packaging Details: Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
Payment Terms: T/T

25.4mm 1inch AlN Single Crystal 400um 2H Crystal Form

Description
Appearance: Circular Belt Positioning Edge Product Name: Aluminum Nitride Wafer
Diameter(mm): 25.4±0.5 Thickness(μm): 400±50
Crystal Form: 2H Polytype: {0001}±0.5°
Highlight:

25.4mm AlN Single Crystal

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2H aluminum nitride substrate

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1inch AlN Single Crystal

25.4±0.5mm 1inch AlN Single Crystal 400±50μM S/P/R Grade {0001}±0.5°

JDCD02-001-002 1inch AlN single crystal 400±50μm S/P/R grade

 


Aluminum Nitride is a highly desirable material in specific applications where high thermal conductivity, electrical insulation, and/or mechanical strength is required.

The material is a good electrical insulator with excellent thermal conductivity. Its high insulating properties make it an excellent choice for a variety of applications. A wide variety of products can be made from aluminum nitride.

This is the most common use for aluminum nitride. It is an important material in the aerospace industry. However, there are some limitations associated with it. It is unstable at high temperatures and in some environments.
 

 

 

1inch Aluminum nitride single crystal substrate
Crystal Specifications Parameter value
Diameter(mm) 25.4±0.5
Thickness(μm) 400±50
Crystal Form 2H
Polytype {0001}±0.5°
Surface polishing Aluminum surface: chemical polishing (double polishing can be customized)
Roughness

Al face:≤0.5nm

N face(back):≤1.2μm

appearance Circular belt positioning edge
Quality grade S grade(Super) P grade(Prouduction) R grade(Research)
HRXRD Half height width@{0002}(arcsec) ≤150 ≤300 ≤500
HRXRD Half height width@{10-12}(arcsec) ≤100 ≤200 ≤400
absorption coefficient@265nm(cm-1) ≤50 ≤70 ≤100
Edge Exclusion(mm) 1 1 1
Indents / / /
Chips / / ≤3 Cumulative ≤1.0mm
TUA ≥90%
Main positioning edge orientation {10-10}±5.0°
Orientation of secondary locating surface

Al face:Rotate clockwise in the direction of the main positioning edge90°±5°

N face:Rotate counterclockwise in the direction of the main positioning edge90°±5°

TTV(μm) ≤30
Warp(μm) ≤30
Bow(μm) ≤30
Cracks No, naked eye, strong light
Contamination No, naked eye, radiation
Laser coding N face,Parallel to the main locating edge
Package Monolithic wafer box

 

 

 

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

 

 

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

 

Contact Details
Shanghai GaNova Electronic Information Co., Ltd.

Contact Person: Xiwen Bai (Ciel)

Tel: +8613372109561

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