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SiC Epitaxial Wafer

Best Products

350um 4H SiC substrate

350um 4H SiC substrate

SiC N Type Substrate

SiC N Type Substrate

6inch SiC Epitaxial Wafer

6inch SiC Epitaxial Wafer

China SiC Epitaxial Wafer

4inch GaN on Silicon Green LED Epi wafer SiC epitaxial wafers

Minimum Order Quantity:5

Price:1000

Packaging Details:Packaged in a class 100 clean room environment, in 25PCS container, under a nitrogen atmosphere
4inch 4H-SiC substrate P-level SI 500.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm for power and microwave

Product Name:Sic Epitaxial Wafer

Diameter:100.0mm+0.0/-0.5mm

Surface orientation:{0001}±0.2°
4inch 4H-SiC Substrate P-Level SI 500.0±25.0μM MPD≤0.3/Cm2 Resistivity≥1E9Ω·Cm For Power And Microwave

Product Name:Sic Epitaxial Wafer

Diameter:100.0mm+0.0/-0.5mm

Surface orientation:{0001}±0.2°

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GaN Epitaxial Wafer: 2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing; Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices; 2 inch Free-standing SI-GaN Substrates

SiC Epitaxial Wafer: Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um; 4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um; Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP

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