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SiC Epitaxial Wafer

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350um 4H SiC substrate

SiC N Type Substrate

6inch SiC Epitaxial Wafer

China SiC Epitaxial Wafer

150.0mm +0mm/-0.2mm SiC Epitaxial Wafer 47.5mm ± 1.5mm

Product Name:Sic Epitaxial Wafer

Surface Orientation:Off-Axis:4°toward <11-20>±0.5 °

Primary Flat Length:47.5mm ± 1.5mm
2 Inch SiC Substrate 350μm For Demanding Power Electronics

Crystal Form:4H

Product Name:2inch diameterSilicon Carbide (SiC)Substrate Specification

Diameter:50.8mm±0.38mm
0.015Ω•cm—0.025Ω•cm SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP

Product Name:6 inch diameter Silicon Carbide (SiC) Substrate Specification

Primary Flat Orientation:{10-10}±5.0°

Crystal Form:4H
No Secondary Flat SiC Substrate 150.0mm 47.5mm

Crystal Form:4H

Product Name:Sic Epitaxial Wafer

Diameter:150.0mm +0mm/-0.2mm
Polytype None Permitted SiC Epitaxial Wafer P-MOS P-SBD D Grade

Product Name:Sic Epitaxial Wafer

Primary Flat Length:47.5mm ± 1.5mm

Diameter:150.0mm +0mm/-0.2mm
260μm Silicon Carbide Substrate P Level For Power Devices And Microwave Devices

Crystal Form:4H

Product Name:Sic Epitaxial Wafer

Diameter:150.0mm +0mm/-0.2mm
150.0 mm + 0mm / -0.2mm SiC Epitaxial Wafer 4H Crystal Form

Diameter:150.0mm +0mm/-0.2mm

Product Name:SiC Epitaxial Wafer

Surface Orientation:Off-Axis:4°toward <11-20>±0.5 °
P MOS Grade 2 Inch SiC Epi Wafer P Level P SBD Grade D Grade 150.0mm

Crystal Form:4H

Product Name:Sic Epitaxial Wafer

Diameter:150.0mm +0mm/-0.2mm
4H SiC Epitaxial Wafer ≤0.2 /cm2 0.015Ω•cm—0.025Ω•cm 150.0 mm +0mm/-0.2mm

Product Name:SiC Epitaxial Wafer

Crystal Form:4H

Polytype:None Permitted
2 Inch Semiconductor Wafer P Level 260μm For Power Devices Microwave Devices

Crystal Form:4H

Product Name:Sic Epitaxial Wafer

Diameter:150.0mm +0mm/-0.2mm
4H SiC Epitaxial Wafer SiC Wafer Substrate For Photonic Devices ISO9001

Product Name:SiC Epitaxial Wafer

Crystal Form:4H

Diameter:150.0 mm +0mm/-0.2mm
6inch 4H SiC N Type Substrate 47.5mm No Secondary Flat

Crystal Form:4H

Surface Metal Contamination:(Al, Cr, Fe, Ni, Cu, Zn, Pb, Na, K, Ti, Ca ,V, Mn) ≤1E11cm⁻²

Product Name:Sic Epitaxial Wafer

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SiC Epitaxial Wafer

350um 4H SiC substrate

SiC N Type Substrate

6inch SiC Epitaxial Wafer

China SiC Epitaxial Wafer

150.0mm +0mm/-0.2mm SiC Epitaxial Wafer 47.5mm ± 1.5mm

2 Inch SiC Substrate 350μm For Demanding Power Electronics

0.015Ω•cm—0.025Ω•cm SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP

No Secondary Flat SiC Substrate 150.0mm 47.5mm

Polytype None Permitted SiC Epitaxial Wafer P-MOS P-SBD D Grade

260μm Silicon Carbide Substrate P Level For Power Devices And Microwave Devices

150.0 mm + 0mm / -0.2mm SiC Epitaxial Wafer 4H Crystal Form

P MOS Grade 2 Inch SiC Epi Wafer P Level P SBD Grade D Grade 150.0mm

4H SiC Epitaxial Wafer ≤0.2 /cm2 0.015Ω•cm—0.025Ω•cm 150.0 mm +0mm/-0.2mm

2 Inch Semiconductor Wafer P Level 260μm For Power Devices Microwave Devices

4H SiC Epitaxial Wafer SiC Wafer Substrate For Photonic Devices ISO9001

6inch 4H SiC N Type Substrate 47.5mm No Secondary Flat

GaN Epitaxial Wafer

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

2 inch Free-standing SI-GaN Substrates

SiC Epitaxial Wafer

Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um

4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP