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SiC Epitaxial Wafer

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350um 4H SiC substrate

SiC N Type Substrate

6inch SiC Epitaxial Wafer

China SiC Epitaxial Wafer

Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP

Product Name:Sic Epitaxial Wafer

Crystal Form:4H

Surface Finish:C-Face:Optical Polish,Si-Face:CMP
4inch 4H-SiC Substrate P-Level N-Type 350.0±25.0μM MPD≤0.5/Cm2 Resistivity 0.015Ω•Cm—0.025Ω•Cm

Product Name:Sic Epitaxial Wafer

Crystal form:4H

Diameter:100.0mm+0.0/-0.5mm
2 Inch Power Device High Electron Mobility Transistor Epitaxial Wafer

Dimensions:2 inch

Resistivity(300K):< 350 Ω/□

Electron Concentration:> 1800 cm2/(V·S)
2 Inch GaN On Silicon HEMT Epi Wafer For Power Device

Dimensions:2 inch

Resistivity(300K):< 350 Ω/□

Electron Concentration:> 1800 cm2/(V·S)
6 Inch GaN On Silicon HEMT Epi Wafer Power Device Gallium Nitride GaN On Si

Dimensions:6 inch

Resistivity(300K):< 350 Ω/□

Electron Concentration:> 9.0E12 cm-2
Blue LED GaN On Silicon Wafer Blue Laser GaN Epitaxial Wafer

Dimension:2 -4 inch

Minimum Order Quantity:5

Packaging Details:Packaged in a class 100 clean room environment, in 25PCS container, under a nitrogen atmosphere
2inch GaN on Silicon Green LED Epi wafer Gallium Nitride on Silicon

Dimension:2 inch

Minimum Order Quantity:5

Packaging Details:Packaged in a class 100 clean room environment, in 25PCS container, under a nitrogen atmosphere
2inch GaN on Silicon Blue LD Epi wafer GaN blue laser on silicon

Dimension:2 inch

Minimum Order Quantity:5

Packaging Details:Packaged in a class 100 clean room environment, in 25PCS container, under a nitrogen atmosphere
GaN violet laser on silicon 2 inch GaN on Silicon HEMT Epi wafer UV LD Epi wafer

Dimensions:2 inch

IQE:Unknow

internal Loss:Unknown
AlGaN barrier 4 inch GaN on Silicon HEMT Epi wafer gallium nitride GaN-on-Si

Dimensions:2 inch

Resistivity(300K):< 350 Ω/□

Electron Concentration:> 9.0E12 cm-2
4inch uGaN on silicon undoped gallium nitride on Silicon Epitaxial Wafer

Dimension:4inch

Bicristalline002:＜550arcsec

Bicristalline102:＜550arcsec
4inch GaN on Silicon Green LED Epi wafer SiC epitaxial wafers

Minimum Order Quantity:5

Price:1000

Packaging Details:Packaged in a class 100 clean room environment, in 25PCS container, under a nitrogen atmosphere

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SiC Epitaxial Wafer

350um 4H SiC substrate

SiC N Type Substrate

6inch SiC Epitaxial Wafer

China SiC Epitaxial Wafer

Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP

4inch 4H-SiC Substrate P-Level N-Type 350.0±25.0μM MPD≤0.5/Cm2 Resistivity 0.015Ω•Cm—0.025Ω•Cm

2 Inch Power Device High Electron Mobility Transistor Epitaxial Wafer

2 Inch GaN On Silicon HEMT Epi Wafer For Power Device

6 Inch GaN On Silicon HEMT Epi Wafer Power Device Gallium Nitride GaN On Si

Blue LED GaN On Silicon Wafer Blue Laser GaN Epitaxial Wafer

2inch GaN on Silicon Green LED Epi wafer Gallium Nitride on Silicon

2inch GaN on Silicon Blue LD Epi wafer GaN blue laser on silicon

GaN violet laser on silicon 2 inch GaN on Silicon HEMT Epi wafer UV LD Epi wafer

AlGaN barrier 4 inch GaN on Silicon HEMT Epi wafer gallium nitride GaN-on-Si

4inch uGaN on silicon undoped gallium nitride on Silicon Epitaxial Wafer

4inch GaN on Silicon Green LED Epi wafer SiC epitaxial wafers

GaN Epitaxial Wafer

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

2 inch Free-standing SI-GaN Substrates

SiC Epitaxial Wafer

Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um

4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP