Buy n type silicon epi wafer, Good quality n type silicon epi wafer manufacturer

Microelectronic 279um Silicon Epitaxial Wafer Primary Substrate
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Thickness(m)279 Silicon Wafer TTV(m) Standard Read More

2022-09-27 16:51:53

2'' Semiconductor Silicon Wafer Thickness 279μm
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2-Inch Silicon Wafer Thickness(m)279 Resistivity 0.001-100 Ohm-cm 2-Inch Silicon Wafer MEMS Devices, Integrated Circuits,Dedicated Substrates For Discrete Devices Overview Few of us have a chance to encounter ... Read More

2022-09-27 16:54:31

2–6-Inch N Type GaN On Sapphire Epitaxial Wafer For LED Laser PIN Device
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Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of devices and are important raw ... Read More

2024-12-06 17:48:43

2 Inch GaN On Silicon HEMT Epi Wafer For Power Device
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Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its ... Read More

2024-12-06 17:40:06

Thickness 370um 430um 2 Inch GaN Epi Wafer Dimensions 50mm
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Thickness 400 30 m 2-Inch Free-Standing N-GaN Substrates Dimensions 50.0 0.3 mm 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 cm Power device/laser wafer Overview ... Read More

2024-10-29 11:49:57

6inch 4H SiC Substrate N Type P SBD Grade 350μm
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6inch 4H-SiC substrate N-Type P-SBD Grade 350.025.0m MPD0.5/cm2 Resistivity 0.015cm0.025cm for power and microwave devices Overview SiC boules (crystals) are grown, machined into ingots, and then sliced into ... Read More

2022-10-24 10:23:04

AlGaN barrier 4 inch GaN on Silicon HEMT Epi wafer gallium nitride GaN-on-Si
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Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its ... Read More

2024-12-06 17:33:44

6 Inch GaN On Silicon HEMT Epi Wafer Power Device Gallium Nitride GaN On Si
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Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its ... Read More

2024-12-06 17:38:23

2inch GaN on Silicon Blue LD Epi wafer GaN blue laser on silicon
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Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its ... Read More

2024-12-06 17:35:32

4H SiC Epitaxial Wafer 0.015Ω•cm—0.025Ω•Cm ≤4000/cm²150.0 mm +0mm/-0.2mm
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4H SiC Epitaxial Wafer 0.015cm0.025cm 4000/cm2 150.0 mm +0mm/-0.2mm JDCD03-001-003 Overview The next type is beta silicon carbide. Beta SiC is produced at temperatures higher than 1700 degrees Celsius. Alpha ... Read More

2024-10-29 11:49:58

GaN Epitaxial Wafer

SiC Epitaxial Wafer

GaAs Epi Wafer

CVD Diamond Substrates

Rapid Thermal Annealing System

Hall Effect Sensor Tester

Aluminum Nitride Wafer

Laser Diode Chip

Silicon Carbide Crystal

Ga2O3 Wafer

Silicon Wafer

Sapphire Wafer

Patterned Sapphire Substrates

Wafer Holder

Wafer Dicing Machine

n type silicon epi wafer online manufacture

Microelectronic 279um Silicon Epitaxial Wafer Primary Substrate
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2'' Semiconductor Silicon Wafer Thickness 279μm
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2–6-Inch N Type GaN On Sapphire Epitaxial Wafer For LED Laser PIN Device
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2 Inch GaN On Silicon HEMT Epi Wafer For Power Device
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Thickness 370um 430um 2 Inch GaN Epi Wafer Dimensions 50mm
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6inch 4H SiC Substrate N Type P SBD Grade 350μm
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AlGaN barrier 4 inch GaN on Silicon HEMT Epi wafer gallium nitride GaN-on-Si
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6 Inch GaN On Silicon HEMT Epi Wafer Power Device Gallium Nitride GaN On Si
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2inch GaN on Silicon Blue LD Epi wafer GaN blue laser on silicon
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4H SiC Epitaxial Wafer 0.015Ω•cm—0.025Ω•Cm ≤4000/cm²150.0 mm +0mm/-0.2mm
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GaN Epitaxial Wafer

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

2 inch Free-standing SI-GaN Substrates

SiC Epitaxial Wafer

Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um

4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP