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Product Details:
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| Product Name: | 2-inch Free-standing N-GaN Substrates | BOW: | ≤ 20μm |
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| Orientation Flat: | (1- 100) ±0.1˚, 12.5 ± 1mm | Dimensions: | 50.0 ±0.3mm |
| Thickness: | 400 ± 30μm | TTV: | ≤ 15µm |
| Highlight: | 2 Inch GaN Epi Wafer,370um single crystal wafer,430um GaN Epi Wafer |
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Thickness 400 ± 30 μm 2-Inch Free-Standing N-GaN Substrates Dimensions 50.0 ±0.3 mm
2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer
Overview
The most common method, metal organic chemical vapor deposition (MOCVD), inherently results in GaN that is contaminated by carbon, oxygen, and silicon atoms originating from the metal-organic precursors, susceptors, and reactor walls. The extent of contamination complexly depends on the growth conditions, including the growth temperature, III/V ratio, gas flow rate, and reactor pressure.
| 2-inch Free-standing N-GaN Substrates | ||||||
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Production level(P) |
Research(R) |
Dummy(D) |
Note: (1) 5 points: the miscut angles of 5 positions are 0.55 ±0.15o (2) 3 points: the miscut angles of positions (2, 4, 5) are 0.55 ±0.15o (3) Useable area: exclusion of periphery and macro defects (holes) |
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| P+ | P | P- | ||||
| Item | GaN-FS-C-N-C50-SSP | |||||
| Dimensions | 50.0 ±0.3 mm | |||||
| Thickness | 400 ± 30 μm | |||||
| Orientation flat | (1- 100) ±0.1o, 12.5 ± 1 mm | |||||
| TTV | ≤ 15 μm | |||||
| BOW | ≤ 20 μm | |||||
| Resistivity (300K) | ≤ 0.02 Ω·cm for N-type (Si-doped) | |||||
| Ga face surface roughness | <0.3 nm (polished and surface treatment for epitaxy) | |||||
| N face surface roughness | 0.5 ~1.5 μm (single side polished) | |||||
| C plane (0001) off angle toward M-axis(miscut angles) |
0.55 ± 0.1o (5 points) |
0.55± 0.15o (5 points) |
0.55 ± 0.15o (3 points) |
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| Threading dislocation density | ≤ 7.5 x 105 cm-2 | ≤ 3 x 106 cm-2 | ||||
| Number and max size of holes in Ф47 mm in the center | 0 | ≤ 3@1000 μm | ≤ 12@1500 μm | ≤ 20@3000 μm | ||
| Useable area | > 90% | >80% | >70% | |||
| Package | Packaged in a cleanroom in single wafer container | |||||
About Us
We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.
FAQ
Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.
Contact Person: Xiwen Bai (Ciel)
Tel: +8613372109561
