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buy GaN Epitaxial Wafer Essential For High Voltage High Frequency Chip Production online manufacturer

GaN Epitaxial Wafer Essential For High Voltage High Frequency Chip Production

Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of devices and are important raw ... Read More
2024-12-06 17:47:04
buy 5x10mm2 GaN Epitaxial Wafer Un Doped SI Type online manufacturer

5x10mm2 GaN Epitaxial Wafer Un Doped SI Type

5*10mm2 Free-Standing GaN Single Crystal Substrate (20-21)/(20-2-1) Un-Doped SI-Type 5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices ... Read More
2024-10-29 11:49:57
buy 2 Inch Power Device High Electron Mobility Transistor Epitaxial Wafer online manufacturer

2 Inch Power Device High Electron Mobility Transistor Epitaxial Wafer

Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its ... Read More
2024-12-06 17:41:10
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Blue LED GaN On Silicon Wafer Blue Laser GaN Epitaxial Wafer

Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its ... Read More
2024-12-06 17:37:25
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Optical Communications Gallium Arsenide Substrate LEDs

2inch GaAs (100) Undoped Substrates Overview Gallium arsenide is used in the manufacture of light-emitting diode s (LEDs), which are found in optical communications and control systems. Gallium arsenide can ... Read More
2022-10-09 09:53:08
buy 2inch C-Face Fe-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·cm RF Devices online manufacturer

2inch C-Face Fe-Doped SI-Type Free-Standing GaN Single Crystal Substrate Resistivity > 10⁶ Ω·cm RF Devices

2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices Overview Gallium Nitride (GaN) epitaxial wafers (epi-wafers). GaN high-electron-mobility transistors ... Read More
2024-07-31 15:01:27
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