sic epitaxial wafer c face online manufacture

P-Level SI-Type 6inch 4H-SiC Semi insulating substrate 350.025.0m MPD0.5/cm2 Resistivity1E9cm 6inch 4H-SiC substrate P-level SI-Type 350.025.0m MPD0.5/cm2 Resistivity1E9cm for power and microwave devices ... Read More

4inch 4H-SiC substrate D-level N-Type 350.025.0m MPD5/cm2 Resistivity 0.015cm0.025cm for power and microwave devices Overview High Temperature Devices Because SiC has a high thermal conductivity, SiC dissipates ... Read More

JDCD03-002-002 4inch 4H-SiC substrate P-level SI 500.025.0m MPD5/cm2 Resistivity1E5cm for power and microwave devices Overview SiC is used for the fabrication of very high-voltage and high-power devices such as ... Read More