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silicon carbide crystal 4h online manufacture

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buy 4H SiC Epitaxial Wafer ≤0.2 /cm2 0.015Ω•cm—0.025Ω•cm 150.0 mm +0mm/-0.2mm online manufacturer

4H SiC Epitaxial Wafer ≤0.2 /cm2 0.015Ω•cm—0.025Ω•cm 150.0 mm +0mm/-0.2mm

4H SiC Epitaxial Wafer 0.2 /Cm2 0.015Cm0.025Cm 150.0 mm +0mm/-0.2mm JDCD03-001-004 Overview The 200-mm wafers can be used for a variety of applications. These wafers are 50% thinner than the standard silicon ... Read More
2024-10-29 11:49:58
buy Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP online manufacturer

Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP

JDCD03-001-004 SiC Epitaxial Wafer C-Face:Optical Polish,Si-Face:CMP Overview It involves the growth of crystals of one material on the crystal face of another (heteroepitaxy) or the same (homoepitaxy) material... Read More
2022-10-24 10:26:24
buy 6inch N Type Wafer P MOS Grade 4H SiC Substrate 350.0 ± 25.0um online manufacturer

6inch N Type Wafer P MOS Grade 4H SiC Substrate 350.0 ± 25.0um

6inch 4H-SiC substrate N-Type P-MOS Grade 350.025.0m MPD0.2/cm2 Resistivity 0.015cm0.025cm for power and microwave devices Overview SiC is used for the fabrication of very high-voltage and high-power devices ... Read More
2022-10-24 10:21:10
buy 150.0mm +0mm/-0.2mm SiC Epitaxial Wafer 47.5mm ± 1.5mm online manufacturer

150.0mm +0mm/-0.2mm SiC Epitaxial Wafer 47.5mm ± 1.5mm

150.0mm +0mm/-0.2mm JDCD03-001-004 SiC Epitaxial Wafer 47.5 mm 1.5 mm Overview Because SiC has a high thermal conductivity, SiC dissipates heat more rapidly than other semiconductor materials. This enables SiC ... Read More
2022-10-24 10:23:40
buy 350um 4H SiC substrate online manufacturer

350um 4H SiC substrate

6inch 4H-SiC Substrate N-Type P-SBD Grade 350.025.0m MPD0.5/cm2 Resistivity 0.015Cm0.025Cm For Power And Microw 6inch 4H-SiC substrate N-Type Overview Silicon carbide (SiC) is a non-oxide ceramic engineering ... Read More
2022-10-09 16:57:57
buy P Level 2 Inch SiC Substrate For Power Devices And Microwave Devices online manufacturer

P Level 2 Inch SiC Substrate For Power Devices And Microwave Devices

P-Level 4H-N/SI260um25um 2-Inch SiC Substrate For Power Devices And Microwave Devices JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260m25m for power devices and microwave devices Overview Key features ... Read More
2024-10-29 11:49:58
buy 4H SiC Epitaxial Wafer 0.015Ω•cm—0.025Ω•Cm ≤4000/cm²150.0 mm +0mm/-0.2mm online manufacturer

4H SiC Epitaxial Wafer 0.015Ω•cm—0.025Ω•Cm ≤4000/cm²150.0 mm +0mm/-0.2mm

4H SiC Epitaxial Wafer 0.015cm0.025cm 4000/cm2 150.0 mm +0mm/-0.2mm JDCD03-001-003 Overview The next type is beta silicon carbide. Beta SiC is produced at temperatures higher than 1700 degrees Celsius. Alpha ... Read More
2024-10-29 11:49:58
buy 150.0mm +0mm/-0.2mm SiC Epitaxial Wafer No Secondary Flat 3mm online manufacturer

150.0mm +0mm/-0.2mm SiC Epitaxial Wafer No Secondary Flat 3mm

JDCD03-001-003 Overview SiC boules (crystals) are grown, machined into ingots, and then sliced into substrates, which are subsequently polished. A thin SiC epitaxial layer is then grown on top of this substrate ... Read More
2024-10-29 11:49:58
buy 6inch SiC Epitaxial Wafer online manufacturer

6inch SiC Epitaxial Wafer

P-SBD Grade 6inch 4H-SiC substrate N-Type Off-Axis:4toward 0.5 6inch 4H-SiC Substrate N-Type P-SBD Grade 350.025.0M MPD0.5/Cm2 Resistivity 0.015Cm0.025cm For Power And Microw 6inch 4H-SiC substrate N-Type ... Read More
2022-10-09 16:56:20
buy JDZJ01-001-004 SiC Ingot Crystal 6" P grade online manufacturer

JDZJ01-001-004 SiC Ingot Crystal 6" P grade

SiC ingot crystal 6" Pgrade Silicon carbide, exceedingly hard, synthetically produced crystalline compound of silicon and carbon. Its chemical formula is SiC. Since the late 19th century silicon carbide has ... Read More
2022-09-29 15:53:31
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