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4H SiC Epitaxial Wafer ≤0.2 /cm2 0.015Ω•cm—0.025Ω•cm 150.0 mm +0mm/-0.2mm2024-10-29 11:49:58 |
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Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP2022-10-24 10:26:24 |
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6inch N Type Wafer P MOS Grade 4H SiC Substrate 350.0 ± 25.0um2022-10-24 10:21:10 |
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150.0mm +0mm/-0.2mm SiC Epitaxial Wafer 47.5mm ± 1.5mm2022-10-24 10:23:40 |
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350um 4H SiC substrate2022-10-09 16:57:57 |
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P Level 2 Inch SiC Substrate For Power Devices And Microwave Devices2024-10-29 11:49:58 |
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4H SiC Epitaxial Wafer 0.015Ω•cm—0.025Ω•Cm ≤4000/cm²150.0 mm +0mm/-0.2mm2024-10-29 11:49:58 |
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150.0mm +0mm/-0.2mm SiC Epitaxial Wafer No Secondary Flat 3mm2024-10-29 11:49:58 |
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6inch SiC Epitaxial Wafer2022-10-09 16:56:20 |
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JDZJ01-001-004 SiC Ingot Crystal 6" P grade2022-09-29 15:53:31 |