silicon carbide crystal p grade online manufacture

4H SiC Epitaxial Wafer 0.015cm0.025cm 4000/cm2 150.0 mm +0mm/-0.2mm JDCD03-001-003 Overview The next type is beta silicon carbide. Beta SiC is produced at temperatures higher than 1700 degrees Celsius. Alpha ... Read More

150.0 mm +0mm/-0.2mm Sic Epitaxial Wafer Off-Axis:4Toward 0.5 JDCD03-001-004 Overview A SiC wafer is a semiconductor made of silicon. Its flatness, thermal conductivity, and electrical conductivity make it an ... Read More

P-Level 2-Inch SiC Substrate 4H-N/SI260m25m For Demanding Power Electronics JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260m25m for power devices and microwave devices Overview High crystal quality for ... Read More

6inch 4H-SiC Substrate N-Type P-SBD Grade 350.025.0m MPD0.5/cm2 Resistivity 0.015cm0.025cm For Power And Microw 6inch 4H-SiC substrate N-Type Overview Currently silicon carbide (SiC) is widely used for high ... Read More

6inch 4H-SiC Substrate N-Type P-SBD Grade 350.025.0m MPD0.5/cm2 Resistivity 0.015Cm0.025Cm For Power And Microw 6inch 4H-SiC substrate N-Type Overview Silicon carbide (SiC) is a non-oxide ceramic engineering ... Read More