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0.001-100 ohm-cm Silicon Wafer P Type Boron Dopant

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0.001-100 ohm-cm Silicon Wafer P Type Boron Dopant

0.001-100 ohm-cm Silicon Wafer P Type Boron Dopant
0.001-100 ohm-cm Silicon Wafer P Type Boron Dopant

Large Image :  0.001-100 ohm-cm Silicon Wafer P Type Boron Dopant

Product Details:
Place of Origin: Suzhou China
Brand Name: GaNova
Certification: UKAS/ISO9001:2015
Model Number: JDCD06-001-002
Payment & Shipping Terms:
Minimum Order Quantity: 1
Packaging Details: Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
Delivery Time: 3-4 week days
Payment Terms: T/T
Supply Ability: 50000pcs/month

0.001-100 ohm-cm Silicon Wafer P Type Boron Dopant

Description
Diameter: 2" Grade: Prime
Growth Method: CZ Orientation: <1-0-0>,<1-1-1>,<1-1-0>
Type/Dopant: P Type/Boron,N Type/Phos,N Type/As, N Type/Sb Thickness(μm): 279
Thickness Tolerance: Standard ± 25μm,Maximum Capabilities ± 5μm Resistivity: 0.001-100 Ohm-cm
Surface Finished: P/E,P/P,E/E,G/G TTV(μm): Standard <10μm,Maximum Capabilities<5μm
Bow/Warp: Standard <40μm,Maximum Capabilities<20μm Particle: <10@0.5μm; <10@0.3μm; <10@0.2μm;
Highlight:

100 ohm-cm Silicon Wafer P Type

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279 um silicon epitaxial wafer

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Silicon Wafer Boron Dopant

0.001-100 ohm-cm Silicon Wafer Particle<10@0.5μm <10@0.3μm <10@0.2μm

2-Inch Silicon Wafer MEMS Devices, Integrated Circuits,Dedicated Substrates For Discrete Devices

 


Overview

Depending on what level the silicon has been doped, the semiconductor can be considered extrinsic or degenerate. Extrinsic would be lightly to moderately doped whereas degenerate semiconductors act more as conductors because of the high levels of doping that occurs during the fabrication.

 

 

Specification

silicon wafer

Diameter

 

2"/3"/4"/5"/6"/8"/12"
Grade Prime
Growth Method CZ
Orientation <1-0-0>,<1-1-1>,<1-1-0>
Type/Dopant P Type/Boron,N Type/Phos,N Type/As, N Type/Sb
Thickness(μm) 279/380/525/625/675/725/775
Thickness Tolerance Standard ± 25μm,Maximum Capabilit/ies ± 5μm
Resistivity 0.001-100 ohm-cm
Surface Finished P/E,P/P,E/E,G/G
TTV(μm) Standard <10 μm,Maximum Capabilities<5 μm
Bow/Warp Standard <40 μm,Maximum Capabilities<20 μm
Particle <10@0.5μm; <10@0.3μm; <10@0.2μm;

 

 

 

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

 

 

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

 

Contact Details
Shanghai GaNova Electronic Information Co., Ltd.

Contact Person: Xiwen Bai (Ciel)

Tel: +8613372109561

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