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Discrete Devices Si Substrates P/E P/P E/E G/G Surface Finished

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Discrete Devices Si Substrates P/E P/P E/E G/G Surface Finished

Discrete Devices Si Substrates P/E P/P E/E G/G Surface Finished
Discrete Devices Si Substrates P/E P/P E/E G/G Surface Finished

Large Image :  Discrete Devices Si Substrates P/E P/P E/E G/G Surface Finished

Product Details:
Place of Origin: Suzhou China
Brand Name: GaNova
Certification: UKAS/ISO9001:2015
Model Number: JDCD06-001-002
Payment & Shipping Terms:
Minimum Order Quantity: 1
Packaging Details: Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
Delivery Time: 3-4 week days
Payment Terms: T/T
Supply Ability: 50000pcs/month

Discrete Devices Si Substrates P/E P/P E/E G/G Surface Finished

Description
Growth Method: CZ Diameter: 2"
Grade: Prime Orientation: <1-0-0>,<1-1-1>,<1-1-0>
Thickness(μm): 279 Thickness Tolerance: Standard ± 25μm,Maximum Capabilities ± 5μm
Resistivity: 0.001-100 Ohm-cm Surface Finished: P/E,P/P,E/E,G/G
Highlight:

Discrete Devices si substrates

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Discrete Devices 2-Inch Silicon Wafer P/E,P/P,E/E,G/G Surface Finished

2-Inch Silicon Wafer MEMS Devices, Integrated Circuits,Dedicated Substrates For Discrete Devices

 


Overview

Silicon is the second most common element on Earth and it is the seventh-most common element in the entire universe. It is the most common semi conductor and the most widely used in the electronic and technology sector.

During the growth process intentional additions of dopants can be added to the to change the purity of the silicon depending on what the purpose of it will be. These introduced impurities can change the electrical properties of the silicon, which can be useful depending on what the silicon is ultimately being produced for.

 

 

Specification

silicon wafer

Diameter

 

2"/3"/4"/5"/6"/8"/12"
Grade Prime
Growth Method CZ
Orientation <1-0-0>,<1-1-1>,<1-1-0>
Type/Dopant P Type/Boron,N Type/Phos,N Type/As, N Type/Sb
Thickness(μm) 279/380/525/625/675/725/775
Thickness Tolerance Standard ± 25μm,Maximum Capabilit/ies ± 5μm
Resistivity 0.001-100 ohm-cm
Surface Finished P/E,P/P,E/E,G/G
TTV(μm) Standard <10 μm,Maximum Capabilities<5 μm
Bow/Warp Standard <40 μm,Maximum Capabilities<20 μm
Particle <10@0.5μm; <10@0.3μm; <10@0.2μm;

 

 

 

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

 

 

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

 

Contact Details
Shanghai GaNova Electronic Information Co., Ltd.

Contact Person: Xiwen Bai (Ciel)

Tel: +8613372109561

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