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Product Details:
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| Dimensions: | 5 X 10mm² | Thickness: | 350 ±25µm |
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| Orientation: | (11-22) Plane Off Angle Toward M-axis 0 ±0.5° (11-22) Plane Off Angle Toward C-axis - 1 ±0.2° | TTV: | ≤ 10µm |
| BoW: | - 10µm ≤ BOW ≤ 10µm | Dislocation Density: | From 1 X 10⁵ To 3 X 10⁶cm⁻² |
| Macro Defect Density: | 0cm⁻² | Useable Area: | > 90% (edge Exclusion) |
| Highlight: | 10⁶Ω·Cm GaN Single Crystal Substrate,10mm2 GaN Single Crystal Substrate |
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5*10mm2 SP-face (11-12) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer
Overview
The GaN semiconductor device market includes key companies such as Cree, Infineon Technologies, Qorvo, MACOM, NXP Semiconductors, Mitsubishi Electric, Efficient Power Conversion (EPC), GaN Systems, Nichia Corporation, and Epistar Corporation.
Thin Epi wafers are commonly used for leading edge MOS devices. Thick Epi or Multi-layered epitaxial wafers are used for the devices mainly to control electric power, and they are contributing to improving the efficiency of energy consumption.
| (11-22) face Free-standing GaN Substrates | ||||
| Item |
GaN-FS-SP-U-S
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GaN-FS-SP-N-S
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GaN-FS-SP-SI-S |
Remarks: A circular arc angle (R < 2 mm) is used for distinguishing the front and back surface. |
| Dimensions | 5 x 10 mm2 | |||
| Thickness | 350 ±25 µm | |||
| Orientation |
(11-22) plane off angle toward M-axis 0 ±0.5° (11-22) plane off angle toward C-axis - 1 ±0.2° |
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| Conduction Type | N-type | N-type | Semi-Insulating | |
| Resistivity (300K) | < 0.1 Ω·cm | < 0.05 Ω·cm | > 106 Ω·cm | |
| TTV | ≤ 10 µm | |||
| BOW | - 10 µm ≤ BOW ≤ 10 µm | |||
| Front Surface Roughness |
< 0.2 nm (polished); or < 0.3 nm (polished and surface treatment for epitaxy) |
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| Back Surface Roughness |
0.5 ~1.5 μm option: 1~3 nm (fine ground); < 0.2 nm (polished) |
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| Dislocation Density | From 1 x 105 to 3 x 106 cm-2 | |||
| Macro Defect Density | 0 cm-2 | |||
| Useable Area | > 90% (edge exclusion) | |||
| Package | Packaged in a class 100 clean room environment, in 6 PCS container, under a nitrogen atmosphere | |||
Appendix: The diagram of miscut angle
If δ1= 0 ±0.5°, then (11-22) plane off angle toward M-Axis is 0 ±0.5°.
If δ2= - 1 ±0.2°, then (11-22) plane off angle toward C-Axis is - 1 ±0.2°.
About Us
We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.
FAQ
Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.
Contact Person: Xiwen Bai (Ciel)
Tel: +8613372109561
