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Product Details:
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| Product Name: | 2-inch Free-standing U-GaN/SI-GaN Substrates | Dimensions: | 50.8 ± 1mm |
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| Thickness: | 350 ± 25μm | Orientation Flat: | (1-100) ± 0.5˚, 16 ±1mm |
| Secondary Orientation Flat: | (11-20) ± 3˚, 8 ± 1mm | Ga Face Surface Roughness: | < 0.2nm (polished) Or < 0.3nm (polished And Surface Treatment For Epitaxy) |
| Highlight: | Free Standing GaN Epitaxial Wafer,U-GaN SI-GaN Substrates,50.8mm GaN Epitaxial Wafer |
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2-inch Free-standing U-GaN/SI-GaN Substrates 50.8 ± 1 mm 350 ± 25 μm
2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer
Overview
GaN Breakdown Field
A higher breakdown field means that gallium nitride is superior over silicon in high voltage circuits such as high-power products. Manufacturers and engineers can also use GaN in similar voltage applications while maintaining a significantly smaller footprint.
| 2-inch Free-standing U-GaN/SI-GaN Substrates | |||||||
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Excellent level (S) |
Production level(A) |
Research level (B) |
Dummy level (C) |
Note: (1) Useable area: edge and macro defects exclusion (2) 3 points: the miscut angles of positions (2, 4, 5) are 0.35 ± 0.15o |
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| S-1 | S-2 | A-1 | A-2 | ||||
| Dimensions | 50.8 ± 1 mm | ||||||
| Thickness | 350 ± 25 μm | ||||||
| Orientation flat | (1-100) ± 0.5o, 16 ± 1 mm | ||||||
| Secondary orientation flat | (11-20) ± 3o, 8 ± 1 mm | ||||||
| Resistivity (300K) |
< 0.5 Ω·cm for N-type (Undoped; GaN-FS-C-U-C50) or > 1 x 106 Ω·cm for Semi-insulating (Fe-doped; GaN-FS-C-SI-C50) |
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| TTV | ≤ 15 μm | ||||||
| BOW | ≤ 20 μm ≤ 40 μm | ||||||
| Ga face surface roughness |
< 0.2 nm (polished) or < 0.3 nm (polished and surface treatment for epitaxy) |
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| N face surface roughness |
0.5 ~1.5 μm option: 1~3 nm (fine ground); < 0.2 nm (polished) |
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| Package | Packaged in a cleanroom in single wafer container | ||||||
| Useable area | > 90% | >80% | >70% | ||||
| Dislocation density | <9.9x105 cm-2 | <3x106 cm-2 | <9.9x105 cm-2 | <3x106 cm-2 | <3x106 cm-2 | ||
| Orientation:C plane (0001) off angle toward M-axis |
0.35 ± 0.15o (3 points) |
0.35 ± 0.15o (3 points) |
0.35 ± 0.15o (3 points) |
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| Macro defect density (hole) | 0 cm-2 | < 0.3 cm-2 | < 1 cm-2 | ||||
| Max size of macro defects | < 700 μm | < 2000 μm | < 4000 μm | ||||
About Us
We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.
FAQ
Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.
Contact Person: Xiwen Bai (Ciel)
Tel: +8613372109561
