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4-Inch Mg-Doped GaN/Sapphire Substrates SSP Resistivity~10Ω cm LED Laser PIN Epitaxial Wafer

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4-Inch Mg-Doped GaN/Sapphire Substrates SSP Resistivity~10Ω cm LED Laser PIN Epitaxial Wafer

4-Inch Mg-Doped GaN/Sapphire Substrates SSP Resistivity~10Ω cm LED Laser PIN Epitaxial Wafer
4-Inch Mg-Doped GaN/Sapphire Substrates SSP Resistivity~10Ω cm LED Laser PIN Epitaxial Wafer
4-Inch Mg-Doped GaN/Sapphire Substrates SSP Resistivity~10Ω cm LED Laser PIN Epitaxial Wafer 4-Inch Mg-Doped GaN/Sapphire Substrates SSP Resistivity~10Ω cm LED Laser PIN Epitaxial Wafer

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Product Details:
Place of Origin: Suzhou China
Brand Name: GaNova
Certification: UKAS/ISO9001:2015
Model Number: JDWY03-001-024
Payment & Shipping Terms:
Packaging Details: Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Delivery Time: 3-4 week days
Payment Terms: T/T
Supply Ability: 10000pcs/month

4-Inch Mg-Doped GaN/Sapphire Substrates SSP Resistivity~10Ω cm LED Laser PIN Epitaxial Wafer

Description
Product Name: 4-inch Mg-doped GaN/Sapphire Substrates Dimensions: 100 ± 0.2mm
Conduction Type: P-type Resistivity (300K): < 10 Ω·cm
Carrier Concentration: > 1 X 10¹⁷ Cm⁻³(doping Concentration Of P+GaN ≥ 5 X 10¹⁹cm⁻³) Mobility: > 5cm²/V·s
Highlight:

LED Laser GaN Epitaxial Wafer

4 inch P-type Mg-doped GaN on sapphire wafer SSP resistivity~10Ω cm LED, laser, PIN epitaxial wafer

 

 

Why Use GaN Wafers?

Gallium Nitride on sapphire is the ideal material for radio energy amplification. It offers a number of benefits over silicon, including a higher breakdown voltage and better performance at high temperatures.

GaN is a binary III/V direct bandgap semiconductor commonly used in bright light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications

optoelectronic
high-power devices
high-frequency devices

 

 

4-inch Mg-doped GaN/Sapphire Substrates
Item GaN-T-C-P-C100

4-Inch Mg-Doped GaN/Sapphire Substrates SSP Resistivity~10Ω cm LED Laser PIN Epitaxial Wafer 0

Dimensions 100 ± 0.2mm
Thickness/Thickness STD 4.5 ± 0.5 μm / < 3%
Orientation C plane (0001) off angle toward A-axis 0.2 ± 0.1 °
Orientation Flat of GaN (1-100) 0 ± 0.2 °, 30 ± 1 mm
Conduction Type P-type
Resistivity (300K) < 10 Ω·cm
Carrier Concentration > 1 x 1017 cm-3 (doping concentration of p+GaN ≥ 5 x 1019cm-3)
Mobility > 5 cm2/V·s
*XRD FWHMs (0002) < 300arcsec,(10-12) < 400arcsec
Structure

~ 0.5 μm p+GaN/~ 1.5 μm p-GaN /~ 2.5 μm uGaN /~ 25 nm uGaN

buffer/430 ± 25 μm sapphire

Orientation of Sapphire C plane (0001) off angle toward M-axis 0.2 ± 0.1 °
Orientation Flat of Sapphire (11-20) 0 ± 0.2 °, 30± 1 mm
Sapphire Polish Single side polished (SSP) / Double side polished (DSP)
Useable Area > 90% (edge and macro defects exclusion)
Package

Packaged in a cleanroom in containers:

single wafer box (< 3 PCS) or cassette (≥ 3 PCS)

 

 

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

 

 

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

Contact Details
Shanghai GaNova Electronic Information Co., Ltd.

Contact Person: Xiwen Bai (Ciel)

Tel: +8613372109561

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