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2inch Blue-LED GaN On Silicon Wafer Longueur D’Onde Laser 455±10nm

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2inch Blue-LED GaN On Silicon Wafer Longueur D’Onde Laser 455±10nm

2inch Blue-LED GaN On Silicon Wafer Longueur D’Onde Laser 455±10nm
2inch Blue-LED GaN On Silicon Wafer Longueur D’Onde Laser 455±10nm

Large Image :  2inch Blue-LED GaN On Silicon Wafer Longueur D’Onde Laser 455±10nm

Product Details:
Place of Origin: Suzhou China
Brand Name: GaNova
Certification: UKAS/ISO9001:2015
Model Number: JDWY03-002-013
Payment & Shipping Terms:
Packaging Details: Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Delivery Time: 3-4 week days
Payment Terms: T/T
Supply Ability: 10000pcs/month

2inch Blue-LED GaN On Silicon Wafer Longueur D’Onde Laser 455±10nm

Description
Features: Blue-LED Product Name: Blue-LED GaN On Silicon Wafer
Dimensions: 2 Inch AlGaN Buffer Thickness: 400-600nm
Longueur D’onde Laser: 455±5nm Substrate Structure: Structure 10nmConnect Layer/pGaN/400-600nmAlGaN/70-150nmInGaN/~15nmGaN-QB/~2.5nmInGaN-QW/70-150nmInGaN/1200-1500nmAlGaN/1300-1500nmnGaN/1300-1500nmnGaN/1300-1500nmuGaN/1000nmAl(Ga)N Buffer/Si(111)substrates
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455±10nm GaN On Silicon Wafer

2inch Blue-LED GaN on silicon wafer

 

 

Gallium Nitride is a semiconductor technology used for high power, high-frequency semiconductor applications. Gallium Nitride exhibits several characteristics that make it better than GaAs and Silicon for various high power components. These characteristics include a higher breakdown voltage and better electrical resistivity.

 

2inch GaN blue laser on silicon

Item

Si(111) substrates

Al(Ga)N buffer uGaN nGaN AlGaN InGaN

MQW

(1-3 pairs)

InGaN AlGaN pGaN Contact layer
InGaN-QW GaN-QB
Dimension 2 inch
Thickness 1000nm 1300-1500nm 1300-1500nm 1200-1500nm 70-150nm ~2.5nm ~15nm 70-150nm 400-600nm / 10nm
Composition Al% / / / 5-8 / / / / 5-8 / /
In% / / /   2-8 ~15 / 2-8 / / /
Doping [Si] / / 5.0E+18 2.0E+18 2.0E+18 / / / / / /
[Mg] / / / / / / / / 2.0E+19 2.0E+19 /
Longueur d’onde laser 455±5nm
Substrate Structure 10nmConnect layer/pGaN/400-600nmAlGaN/70-150nmInGaN/~15nmGaN-QB/~2.5nmInGaN-QW/70-150nmInGaN/1200-1500nmAlGaN/1300-1500nmnGaN/1300-1500nmnGaN/1300-1500nmuGaN/1000nmAl(Ga)N buffer/Si(111)substrates
Package Packaged in a class 100 clean room environment, in 25PCS container, under a nitrogen atmosphere

 

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

 

 

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

Contact Details
Shanghai GaNova Electronic Information Co., Ltd.

Contact Person: Xiwen Bai (Ciel)

Tel: +8613372109561

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