GaN Substrates Ga Face Surface Roughness < 0.2 nm (Polished) Or < 0.3 nm (Polished And Surface Treatment For Epitaxy)

Name: GaN Substrates Ga Face Surface Roughness < 0.2 nm (Polished) Or < 0.3 nm (Polished And Surface Treatment For Epitaxy)
Brand: Shanghai GaNova Electronic Information Co., Ltd.
SKU: JDCD-01-001-001
Price: Negotiable USD
Availability: InStock

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GaN Substrates Ga Face Surface Roughness < 0.2 nm (Polished) Or < 0.3 nm (Polished And Surface Treatment For Epitaxy)

Large Image : GaN Substrates Ga Face Surface Roughness < 0.2 nm (Polished) Or < 0.3 nm (Polished And Surface Treatment For Epitaxy)

Product Details:

Place of Origin:	Suzhou China
Brand Name:	GaNova
Certification:	UKAS/ISO9001:2015
Model Number:	JDCD-01-001-001

Payment & Shipping Terms:

Packaging Details:	Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Delivery Time:	3-4 week days
Payment Terms:	T/T
Supply Ability:	10000pcs/month

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GaN Substrates Ga Face Surface Roughness < 0.2 nm (Polished) Or < 0.3 nm (Polished And Surface Treatment For Epitaxy)

Description

Product Name:	GaN Single Crystal Substrate	Dimensions:	10 X 10.5mm²
Thickness:	350 ±25µm	Orientation:	C Plane (0001) Off Angle Toward M-axis 0.35 ±0.15°
TTV:	≤ 10µm	Macro Defect Density:	0cm⁻²
Highlight:	Surface Treatment GaN Substrates , Epitaxy GaN Substrates , Polished GaN Substrates

10*10.5mm² C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser

Overview
We provide high-quality GaN substrates which are produced by originally designed HVPE (Hydride Vapor Phase Epitaxy) method, utilizing more than 10 years of experience in the GaAsP epi-wafer business.

10 x 10.5 mm2 Free-standing GaN Substrates
Item	GaN-FS-C-U-S10	GaN-FS-C-N-S10	GaN-FS-C-SI-S10	Remarks: A circular arc angle (R < 2 mm) is used for distinguishing the Ga and N face.
Dimensions	10 x 10.5 mm²
Thickness	350 ±25 µm
Orientation	C plane (0001) off angle toward M-axis 0.35 ±0.15°
Conduction Type	N-type	N-type	Semi-Insulating
Resistivity(300K)	< 0.1 Ω·cm	< 0.05 Ω·cm	> 10⁶ Ω·cm
TTV	≤ 10 µm
BoW	- 10 µm ≤ BOW ≤ 10 µm
Ga Face Surface Roughness	< 0.2 nm (polished) or < 0.3 nm (polished and surface treatment for epitaxy)


N Face Surface Roughness	0.5 ~1.5 μm option: 1~3 nm (fine ground); < 0.2 nm (polished)


Dislocation Density	From 1 x 10⁵ to 3 x 10⁶cm^-2 (calculated by CL)*
Macro Defect Density	0 cm^-2
Useable Area	> 90% (edge exclusion)
Package	Packaged in a class 100 clean room environment, in 6 PCS container, under a nitrogen atmosphere

*National standards of China (GB/T32282-2015)

GaN Substrates Ga Face Surface Roughness < 0.2 nm (Polished) Or < 0.3 nm (Polished And Surface Treatment For Epitaxy) 1

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

Tag:

Contact Person: Xiwen Bai (Ciel)

Tel: +8613372109561

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