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AlGaN Buffer Thickness 600nm 2inch Blue-LED GaN On Silicon Wafer

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AlGaN Buffer Thickness 600nm 2inch Blue-LED GaN On Silicon Wafer

AlGaN Buffer Thickness 600nm 2inch Blue-LED GaN On Silicon Wafer
AlGaN Buffer Thickness 600nm 2inch Blue-LED GaN On Silicon Wafer

Large Image :  AlGaN Buffer Thickness 600nm 2inch Blue-LED GaN On Silicon Wafer

Product Details:
Place of Origin: Suzhou China
Brand Name: GaNova
Certification: UKAS/ISO9001:2015
Model Number: JDWY03-002-014
Payment & Shipping Terms:
Packaging Details: Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Delivery Time: 3-4 week days
Payment Terms: T/T
Supply Ability: 10000pcs/month

AlGaN Buffer Thickness 600nm 2inch Blue-LED GaN On Silicon Wafer

Description
Features: 2-4inch Blue-LED GaN On Silicon Dimensions: 2 Inch /4inch
AlGaN Buffer Thickness: 600nm Longueur D’onde Laser: 455±10nm
Substrate Structure: 20nmP++GaN/60nmP-GaN/30nmP-AlGaN/5nmGaN-QB/3nmInGaN-QW/2800nmN-GaN/800nmUndoped GaN/600nmAlGaN Buffer/330nmAIN/Si(111)substrates(1500μm) Product Name: GaN Epitaxial Wafer
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600nm GaN On Silicon Wafer

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2inch GaN On Silicon Wafer

2inch Blue-LED GaN on silicon wafer

 

There are three main substrates that are used with GaN - Silicon Carbide (SiC), Silicon (Si) and Diamond. GaN on SiC is the most common of the three and has been used in various applications in the Military and for High Power Wireless Infrastructure Applications. GaN on Si is a newer substrate whose performance is not as good as SiC but it is more economical. GaN on Diamond is the best performing, however since it is new and relatively expensive, applications, where this has been used, are limited.

 

2-4inch Blue-LED GaN on silicon

Item

Si(111) substrates(1500μm)

AIN AlGaN buffer Undoped GaN N-GaN MQW (7 pairs) P-AlGaN P-GaN

P++GaN

 

InGaN-QW GaN-QB
Dimension 2 inch /4inch
Thickness 330nm 600nm 800nm 2800nm 3nm 5nm 30nm 60nm 20nm
Composition Al% / graded down / / / / 15% / /
In% / / / / 15% / / / /
Doping [Si] / / / 8.0E+18 / 2.0E+17 / / /
[Mg] / / / / / / 1.0E+20 3.0E+19 2.0E+20
Longueur d’onde laser 455±10nm
Substrate Structure 20nmP++GaN/60nmP-GaN/30nmP-AlGaN/5nmGaN-QB/3nmInGaN-QW/2800nmN-GaN/800nmUndoped GaN/600nmAlGaN buffer/330nmAIN/Si(111)substrates(1500μm)
Package Packaged in a class 100 clean room environment, in 25PCS container, under a nitrogen atmosphere

 

 

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

 

 

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

Contact Details
Shanghai GaNova Electronic Information Co., Ltd.

Contact Person: Xiwen Bai (Ciel)

Tel: +8613372109561

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