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4 Inch Blue LED GaN Epitaxial Wafer C Plane Flat Sapphire

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4 Inch Blue LED GaN Epitaxial Wafer C Plane Flat Sapphire

4 Inch Blue LED GaN Epitaxial Wafer C Plane Flat Sapphire
4 Inch Blue LED GaN Epitaxial Wafer C Plane Flat Sapphire
4 Inch Blue LED GaN Epitaxial Wafer C Plane Flat Sapphire 4 Inch Blue LED GaN Epitaxial Wafer C Plane Flat Sapphire

Large Image :  4 Inch Blue LED GaN Epitaxial Wafer C Plane Flat Sapphire

Product Details:
Place of Origin: Suzhou China
Brand Name: GaNova
Certification: UKAS/ISO9001:2015
Model Number: JDWY03-001-031
Payment & Shipping Terms:
Packaging Details: Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Delivery Time: 3-4 week days
Payment Terms: T/T
Supply Ability: 10000pcs/month

4 Inch Blue LED GaN Epitaxial Wafer C Plane Flat Sapphire

Description
Type: Flat Sapphire Product Name: 4inch GaN-on-Sapphire Blue/Green LED Wafer
Polish: Single Side Polished (SSP) / Double Side Polished (DSP) Dimension: 100 ± 0.2mm
Orientation: C Plane (0001) Off Angle Toward M-axis 0.2 ± 0.1° Thickness: 650 ± 25μm
Highlight:

Blue LED GaN Epitaxial Wafer

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4 Inch led wafer

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GaN Epitaxial Wafer C Plane

4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP C Plane (0001) Off Angle Toward M-Axis 0.2 ± 0.1°

4 inch Blue LED GaN epitaxial wafer on sapphire SSP

 

Using blue radiation in LED technology offers two specific advantages – one, it consumes lesser power, two, it is more efficient in terms of light output. For instance, from 2014, to 2018, with advancement in phosphor, the efficiency of blue LEDs increased from 130-140 lm/W to 200-210 lm/W.


Another major problem in producing blue LEDs was the difficulty in p-doping GaN with precision. In the late 1980s, Amano and Akasaki discovered that when GaN was doped with zinc atoms, it emitted more light and thus this gave better p-doping. This phenomena was later explained in an article by Nakamura.
 

 

4inch GaN-on-Sapphire Blue/Green LED Wafer

 

 

 

Substrate

Type Flat Sapphire

 

 

4 Inch Blue LED GaN Epitaxial Wafer C Plane Flat Sapphire 0

Polish Single side polished (SSP) / Double side polished (DSP)
Dimension 100 ± 0.2 mm
Orientation C plane (0001) off angle toward M-axis 0.2 ± 0.1°
Thickness 650 ± 25 μm

 

 

 

Epilayer

Structure 0.2μm pGaN/0.5μm MQWs/2.5μm nGaN/2.0μm uGaN
Thickness 5.5 ± 0.5μm
Roughness (Ra) <0.5 nm
Dislocation density < 5 × 108 cm-2
Wavelength Blue LED Green LED
465 ± 10 nm 525 ± 10 nm
Wavelength FWHMs < 25 nm < 40 nm
Chip Performance Cut-in voltage@1μA 2.3-2.5V 2.2-2.4V
Useable Area > 90% (edge and macro defects exclusion)

 

Package

 

Packaged in a cleanroom in a single wafer container

 

 

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

 

 

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

Contact Details
Shanghai GaNova Electronic Information Co., Ltd.

Contact Person: Xiwen Bai (Ciel)

Tel: +8613372109561

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