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A Face N Type Free Standing GaN Gallium Single Crystal Substrate Un Doped

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A Face N Type Free Standing GaN Gallium Single Crystal Substrate Un Doped

A Face N Type Free Standing GaN Gallium Single Crystal Substrate Un Doped
A Face N Type Free Standing GaN Gallium Single Crystal Substrate Un Doped

Large Image :  A Face N Type Free Standing GaN Gallium Single Crystal Substrate Un Doped

Product Details:
Place of Origin: Suzhou China
Brand Name: GaNova
Certification: UKAS/ISO9001:2015
Model Number: JDCD01-001-005
Payment & Shipping Terms:
Packaging Details: Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Delivery Time: 3-4 week days
Payment Terms: T/T
Supply Ability: 10000pcs/month

A Face N Type Free Standing GaN Gallium Single Crystal Substrate Un Doped

Description
Product Name: GaN Single Crystal Substrate Dimensions: 5 X 10mm²
Thickness: 350 ±25µm Orientation: A Plane (11-20) Off Angle Toward M-axis 0 ±0.5° A Plane (11-20) Off Angle Toward C-axis - 1 ±0.2°
TTV: ≤ 10µm BOW: - 10µm ≤ BOW ≤ 10µm
Highlight:

N Type gan gallium nitride

,

GaN Epitaxial Substrate Un Doped

,

A Face gan gallium nitride Substrate

5*10.5mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer

 


Overview

Power density is greatly improved in gallium nitride devices compared to silicon ones because GaN has the capacity to sustain much higher switching frequencies. It also has an increased ability to sustain elevated temperatures.

 

A face Free-standing GaN Substrates
Item GaN-FS-A-U-S GaN-FS-A-N-S GaN-FS-A-SI-S

A Face N Type Free Standing GaN Gallium Single Crystal Substrate Un Doped 0

 

 

 

 

 

 

 

 

 

Remarks:

A circular arc angle (R < 2 mm) is used for distinguishing the front and back surface.

Dimensions 5 x 10 mm2
Thickness 350 ±25 µm
Orientation

A plane (11-20) off angle toward M-axis 0 ±0.5°

A plane (11-20) off angle toward C-axis - 1 ±0.2°

Conduction Type N-type N-type Semi-Insulating
Resistivity (300K) < 0.1 Ω·cm < 0.05 Ω·cm > 106 Ω·cm
TTV ≤ 10 µm
BOW - 10 µm ≤ BOW ≤ 10 µm
Front Surface Roughness

< 0.2 nm (polished);

or < 0.3 nm (polished and surface treatment for epitaxy)

Back Surface Roughness

0.5 ~1.5 μm

option: 1~3 nm (fine ground); < 0.2 nm (polished)

Dislocation Density From 1 x 105 to 3 x 106 cm-2
Macro Defect Density 0 cm-2
Useable Area > 90% (edge exclusion)
Package Packaged in a class 100 clean room environment, in 6 PCS container, under a nitrogen atmosphere

 

 

Appendix: The diagram of miscut angle

A Face N Type Free Standing GaN Gallium Single Crystal Substrate Un Doped 1

 

If δ1= 0 ±0.5°, then A plane (11-20) off angle toward M-Axis is 0 ±0.5°.

If δ2= - 1 ±0.2°, then A plane (11-20) off angle toward C-Axis is - 1 ±0.2°.

 

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

 

 

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

Contact Details
Shanghai GaNova Electronic Information Co., Ltd.

Contact Person: Xiwen Bai (Ciel)

Tel: +8613372109561

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